TGF2040 400 um Discrete GaAs pHEMT Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Drain Frequency Range: DC - 20 GHz 26 dBm Typical Output Power - P1dB 13 dB Typical Gain at 12 GHz 55% Typical PAE at 12 GHz Gate 1.1 dB Typical NF at12 GHz No Vias Technology: 0.25 um GaAs pHEMT Source Chip Dimensions: 0.41 x 0.34 x 0.10 mm General Description Pad Configuration The TriQuint TGF2040 is a discrete 400 micron pHEMT Pad Dimensions Terminals which operates from DC to 20 GHz. The TGF2040 is G (71um X 71um) Gate fabricated using TriQuints proven standard 0.25 um D (71um X 71um) Drain power pHEMT production process. This process S (121um X 71um) Source features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2040 typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2040 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2040 is lead-free and RoHS compliant. Ordering Information Part ECCN Description TGF2040 EAR99 400 um GaAs pHEMT Datasheet: Rev. C 11-04-13 - 1 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com TGF2040 400 um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Parameter Absolute Continuous Units (2) V Drain-Source Voltage 12 8 V DS V Gate- Source Voltage -7 -3 V GS (2) I Drain Current Idss Idss mA DS I Forward Gate Current 20 3 mA G,F (3) (4) (5) T Channel Temperature 175 150 C CH T Storage Temperature -65 to 150 -65 to 150 C STG (2) P Input Continuous Wave Power 21 at 3 dB Compression dBm IN P Total Power Dissipation 2.1 1.4 W TOT Notes: 1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. When operated at this channel temperature, the median life is 1.0E+5 hours. 5. When operated at this channel temperature, the median life is 1.0E+6 hours. Electrical Characteristics Test conditions unless otherwise noted: Temperature=25C Symbol Parameter Conditions Min Typ Max Units P1dB Output Power at 1dB Compression 24 dBm Freq=12GHz G1dB Gain at P1dB V =8V 14 dB DS I =50%I DS DSS PAE PAE at P1dB 58 % NF 50 ohm Noise Figure Freq.=12 GHz, V =2V, I =15 mA 1.1 dB DS DS (1) I Saturated Drain Current V =2V, V =0V 80 129 178 mA DSS DS GS Gm Transconductance V =2V, I =50%I 155 mS DS DS DSS V Pinch-Off Voltage V =2V, I =0.40 mA -1.5 -1.0 -0.5 V P DS DS BV Gate-Drain Breakdown Voltage I =0.40mA, source open -15 -12 V GD G BV Gate-Source Breakdown Voltage I =0.40mA, drain open -15 V GS G (2) R Thermal Resistance AuSn eutectic attach 60 C/W TH Notes: 1. Typical Standard Deviation of 2mA (1). 2. Based on IR Scan Datasheet: Rev. C 11-04-13 - 2 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com