TGF2025 250 um Discrete GaAs pHEMT Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Drain Frequency Range: DC-20 GHz 24 dBm Typical Output Power - P1dB 14 dB Typical Gain at 12 GHz 58% Typical PAE at 12 GHz Gate 0.9 dB Typical NF at12 GHz No Vias Technology: 0.25 um GaAs pHEMT Source Chip Dimensions: 0.41 x 0.34 x 0.10 mm General Description Pad Configuration The TriQuint TGF2025 is a discrete 250 micron pHEMT Pad Dimensions Terminals which operates from DC to 20 GHz. The TGF2025 is G (71um X 71um) Gate fabricated using TriQuints proven standard 0.25 um D (71um X 71um) Drain power pHEMT production process. This process S (121um X 71um) Source features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the TGF2025 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2025 is lead-free and RoHS compliant. Ordering Information Part ECCN Description TGF2025 EAR99 250 um GaAs pHEMT Datasheet: Rev. D 11-04-13 - 1 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com TGF2025 250 um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Parameter Absolute Continuous Units (2) V Drain-Source Voltage 12 8 V DS V Gate- Source Voltage -7 -3 V GS (2) I Drain Current Idss Idss mA DS I Forward Gate Current 12 2 mA G,F (3) (4) (5) T Channel Temperature 175 150 C CH T Storage Temperature -65 to 150 -65 to 150 C STG (2) P Input Continuous Wave Power 18 at 3 dB Compression dBm IN P Total Power Dissipation 1.34 0.89 W TOT Notes: 1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. When operated at this channel temperature, the median life is 1.0E+5 hours. 5. When operated at this channel temperature, the median life is 1.0E+6 hours. Electrical Characteristics Test conditions unless otherwise noted: Temperature=25C Symbol Parameter Conditions Min Typ Max Units P1dB Output Power at 1dB Compression 24 dBm Freq=12GHz G1dB Gain at P1dB V =8V 14 dB DS I =50%I DS DSS PAE PAE at P1dB 58 % NF 50 ohm Noise Figure V =2V, I =19 mA 0.90 dB DS DS (1) I Saturated Drain Current V =2V, V =0V 50 81 112 mA DSS DS GS Gm Transconductance V =2V, I =50%I 97 mS DS DS DSS V Pinch-Off Voltage V =2V, I =0.18mA -1.5 -1.0 -0.5 V P DS DS BV Gate-Drain Breakdown Voltage I =0.18mA, source open -15 -12 V GD G BV Gate-Source Breakdown Voltage I =0.18mA, drain open -15 V GS G (2) R Thermal Resistance AuSn eutectic attach 62.5 C/W TH Notes: 1. Typical Standard Deviation of 2mA (1). 2. Based on IR Scan Datasheet: Rev. D 11-04-13 - 2 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com