RECTRON SEMICONDUCTOR 1N4151 TECHNICAL SPECIFICATION 1N4151 SIGNAL DIODE Absolute Maximum Ratings (Ta=25 C) Dimensions (DO-35) Items Symbol Ratings Unit Reverse Voltage VR 50 V DO-35 Reverse Recovery trr 2 ns Time 26 MIN 0.457 DIA. Power Dissipation P 500 mW 0.559 3.33mW/ C (25 C) Forward Current IF 300 mA Junction Temp. Tj -65 to 175 C 4.2 Storage Temp. Tstg -65 to 175 C max. 2.0 Mechanical Data DIA. max. Items Materials Package DO-35 26 MIN Case Hermetically sealed glass Lead/Finish Double stud/Solder Plating Dimensions in millimeters Chip Glass Passivated Electrical Characteristics (Ta=25 C) Ratings Symbol Ratings Unit Breakdown Voltage BV V IR= 5.0uA 75 Peak Forward Surge Current PW= 1sec. IFsurge 1.0 A Maximum Forward Voltage VF V IF= 50mA 1.0 Maximum Reverse Current IR uA VR= 50V 0.050 VR= 20V, Tj= 150 C 50 Maximum Junction Capacitance Cj pF VR= 0, f= 1 MHz 2 Max Reverse Recovery Time trr ns IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 2 1315 John Reed Court, Industry, CA 91745 RECTRON USA www.rectron.com Tel: (626) 333-3802 Fax: (626) 330-6296 X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Diodes - General Purpose, Power, Switching category: Click to view products by Rectron manufacturer: Other Similar products are found below : RD0306T-H BAV17-TR BAV19-TR 1N3611 NTE156A NTE525 NTE571 NTE574 NTE5804 NTE5806 NTE6244 1SS181-TP 1SS193,LF 1SS400CST2RA SDAA13 SHN2D02FUTW1T1G LS4151GS08 1N4449 1N456A 1N4934-E3/73 1N914B 1N914BTR RFUH20TB3S BAS 28 E6327 BAV199-TP BAW56DWQ-7-F BAW75-TAP MM230L-CAA IDW40E65D1 JAN1N3600 LL4151-GS18 053684A SMMSD4148T3G 707803H NSVDAN222T1G SP000010217 CDSZC01100-HF BAV199E6433HTMA1 BAV70M3T5G SMBT2001T1G NTE5801 NTE5800 NTE5808 NTE6240 NTE6248 BAS28-7 BAW56HDW-13 BAS28 TR VS-HFA04SD60STR-M3 NSVM1MA152WKT1G