Product Information

1N4448 A0

1N4448 A0 electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching GENERAL PURPOSE SMALL SIGNAL DIODE

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.169 ea
Line Total: USD 0.17

800 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
800 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

1N4448 A0
Taiwan Semiconductor

1 : USD 0.169
3 : USD 0.1469
10 : USD 0.1326
25 : USD 0.0884
100 : USD 0.0793

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 150 mA F High surge current capability V 100 V RRM Compliant to RoHS directive 2011/65/EU and I 2 A in accordance to WEEE 2002/96/EC FSM Halogen-free according to IEC 61249-2-21 V at I =100mA 1 V F F T 150 C APPLICATIONS J MAX Switching mode power supply (SMPS) Package DO-35 Configuration Singal die MECHANICAL DATA Case: DO-35 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 125 4 mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL 1N4148 1N4448 1N914B UNIT Power dissipation P 500 mW D Repetitive peak reverse voltage V 100 V RRM Non-Repetitive peak forward surge current I 2 A FSM Pluse width = 1s, Square wave Non-Repetitive peak forward current I 450 mA FM Forward current I 150 mA F Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 240 C/W JA 1 Version:J1804 1N4148 / 1N4448 / 1N914B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 5 mA, F 0.62 0.72 1N4448,1N914B T = 25C J Forward voltage I = 10 mA, F - 1.00 1N4148 V V F (1) per diode T = 25C J I = 100 mA, F - 1.00 1N4448,1N914B T = 25C J 100 - I = 100 A, T = 25C R J Reverse voltage V V (2) R 75 - I = 5 A, T = 25C R J - 25 V = 20 V, T = 25C nA R J Reverse current I R (2) - 5 V = 75 V, T = 25C A R J Junction - 4 1 MHz, V =0V C pF R J capacitance Reverse I = 10mA , V =6V, R = 100 , F R L - 4 t ns rr recovery time I = 1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING 1N4148 R0G DO-35 10K / 14 Reel 1N4148 R0 DO-35 10K / 14 Reel 1N4148 A0G DO-35 5K / Box(Ammo) 1N4148 A0 DO-35 5K / Box(Ammo) 1N4448 R0G DO-35 10K / 14 Reel 1N4448 R0 DO-35 10K / 14 Reel 1N4448 A0G DO-35 5K / Box(Ammo) 1N4448 A0 DO-35 5K / Box(Ammo) 1N914B R0G DO-35 10K / 14 Reel 1N914B R0 DO-35 10K / 14 Reel 1N914B A0G DO-35 5K / Box(Ammo) 1N914B A0 DO-35 5K / Box(Ammo) 2 Version:J1804

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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