RM3407 P-Channel Enhancement Mode Power MOSFET D Description G The RM3407uses advanced trench technology to provide excellent R , This device is suitable for use as a load DS(ON) switch or in PWM applications. S Schematic diagram General Features V = -30V,I = -4.3A DS D R < 90m V =-4.5V DS(ON) GS R <52m V =-10V DS(ON) GS High power and current handing capability Lead free product is acquired Marking and pin Assignment Surface mount package Application PWM applications Load switch Power management Halogen-free SOT-23 top view P/N suffix V means AEC-Q101 qualified, e.g:RM3407V Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3407 RM3407 SOT23 180mm 8 mm 3000 units Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage -30 V VDS Gate-Source Voltage VGS 20 V Drain Current-Continuous I -4.3 A D (Note 1) Drain Current-Pulsed I -20 A DM Maximum Power Dissipation P 1.5 W D Operating Junction and Storage Temperature Range -55 To 150 T ,T J STG Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Ambient R 84 /W JA Electrical Characteristics (T =25 unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV V =0V I=-250A -30 -33 - V DSS GS D Zero Gate Voltage Drain Current I V =-24V,V=0V - - -1 A DSS DS GS 2018-11/15 REV:A Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I V =20V,V=0V - - 100 nA GSS GS DS (Note 3) On Characteristics Gate Threshold Voltage V V =V ,I=-250 A -1 -1.5 -3 V GS(th) DS GS D V =-10V, I =-4 A - 40 52 m GS D Drain-Source On-State Resistance R DS(ON) V =-4.5V, I=-3A - 48 90 m GS D Forward Transconductance g V =-5V,I=-1A - 10 - S FS DS D (Note4) Dynamic Characteristics Input Capacitance C - 700 - PF lss V =-15V,V =0V, DS GS Output Capacitance C - 120 - PF oss F=1.0MHz Reverse Transfer Capacitance C - 75 - PF rss (Note 4) Switching Characteristics Turn-on Delay Time t - 9 - nS d(on) Turn-on Rise Time t - V =-15V,R =3.6 5 - nS r DD L V =-10V,R =3 Turn-Off Delay Time t - GS GEN 28 - nS d(off) Turn-Off Fall Time t - 13.5 - nS f Total Gate Charge Q - 14 - nC g Gate-Source Charge Q - V =-15V,I =-4A,V =-10V3.1 - nC gs DS D GS Gate-Drain Charge Q - 3 - nC gd Drain-Source Diode Characteristics (Note 3) V V =0V,I=-4.3A - - -1.2 V Diode Forward Voltage SD GS S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production