Product Information


Product Image X-ON


Manufacturer: Rectron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1500: USD 0.4475 ea
Line Total: USD 671.25

3984 - Global Stock
Ships to you between
Fri. 16 Jun to Thu. 22 Jun
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
3984 - Global Stock

Ships to you between Fri. 16 Jun to Thu. 22 Jun

MOQ : 1500
Multiples : 1500

Stock Image


1500 : USD 0.4475
3000 : USD 0.425
4500 : USD 0.4038
6000 : USD 0.3838
12000 : USD 0.365
24000 : USD 0.3463
30000 : USD 0.3288
42000 : USD 0.3125

Product Category
Id - Continuous Drain Current
40 A
Vds - Drain-Source Breakdown Voltage
40 V
Rds On - Drain-Source Resistance
14 mOhms
Transistor Polarity
P - Channel
Vgs th - Gate-Source Threshold Voltage
3 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
80 W
Mounting Style
Package / Case
TO - 252 - 2
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
72 nC
Channel Mode
Transistor Type
1 P - Channel
Forward Transconductance - Min
34 S
Fall Time
24 ns
Product Type
Rise Time
18 ns
Factory Pack Quantity :
Typical Turn-Off Delay Time
38 ns
Typical Turn-On Delay Time
10 ns
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RM40P40LD P-Channel Enhancement Mode Power MOSFET Description The RM40P40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features V =-40V,I =-40A Schematic diagram DS D R <14m V =-10V DS(ON) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Marking and pin assignment Uninterruptible power supply Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM40P40LDV 100% UIS TESTED 100% Vds TESTED TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 40P40 RM40P40LD TO-252-2L - -- Absolute Maximum Ratings (T =25 unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage -40 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous I -40 A D Drain Current-Continuous(T =100)I (100 ) -25 A C D Pulsed Drain Current -50 A I DM Maximum Power Dissipation 80 W P D Derating factor 0.53 W/ (Note 5) Single pulse avalanche energy E 544 mJ AS Operating Junction and Storage Temperature Range -55 To 175 T ,T J STG 2018-10/15 REV:A Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case R 1.88 /W JC Electrical Characteristics (T =25 unless otherwise noted) C Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV V =0V I=-250 A -40 - - V DSS GS D Zero Gate Voltage Drain Current I V =-40V,V=0V - - -1 A DSS DS GS Gate-Body Leakage Current I V =20V,V=0V - - 100 nA GSS GS DS (Note 3) On Characteristics Gate Threshold Voltage V V =V ,I=-250 A -1.5 -1.9 -3.0 V GS(th) DS GS D Drain-Source On-State Resistance R V =-10V, I=-12A - 12 14 m DS(ON) GS D Forward Transconductance g V =-5V,I=-12A 34 - - S FS DS D (Note4) Dynamic Characteristics Input Capacitance C - 2960 - PF lss V =-20V,V =0V, DS GS Output Capacitance C - 370 - PF oss F=1.0MHz Reverse Transfer Capacitance C - 310 - PF rss (Note 4) Switching Characteristics Turn-on Delay Time t - 10 - nS d(on) Turn-on Rise Time t - V =-20V,I =-20A 18 - nS r DD D Turn-Off Delay Time t - V =-10V,R =3 38 - nS GS G d(off) Turn-Off Fall Time t - 24 - nS f Total Gate Charge Q - 72 nC g V =-20,I =-12A, DS D Gate-Source Charge Q - 14 nC gs V =-10V GS Gate-Drain Charge Q - 15 nC gd Drain-Source Diode Characteristics (Note 3) Diode Forward Voltage V V =0V,I=-20A - -1.2 V SD GS S (Note 2) Diode Forward Current I - - -40 A S Reverse Recovery Time t - TJ = 25C, IF =- 20A 40 nS rr (Note3) Reverse Recovery Charge di/dt = -100A/ s Qrr - 42 nC Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. E condition: Tj=25 ,V =-20V,V =-10V,L=1mH,Rg=25 ,I =33A AS DD G AS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

Rectron Semiconductor