X-On Electronics has gained recognition as a prominent supplier of RM40P40LD-T MOSFETs across the USA, India, Europe, Australia, and various other global locations. RM40P40LD-T MOSFETs are a product manufactured by Rectron. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RM40P40LD-T Rectron

RM40P40LD-T electronic component of Rectron
Images are for reference only
See Product Specifications
Part No. RM40P40LD-T
Manufacturer: Rectron
Category: MOSFETs
Description: MOSFET D-PAK MOSFET
Datasheet: RM40P40LD-T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2484: USD 0.5982 ea
Line Total: USD 1485.93 
Availability - 0
MOQ: 2484  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 08 May to Wed. 14 May
MOQ : 2484
Multiples : 2500
2484 : USD 0.5982
2500 : USD 0.5438
5000 : USD 0.5411
7500 : USD 0.5384
10000 : USD 0.5357
15000 : USD 0.533
25000 : USD 0.5304
50000 : USD 0.5277

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RM40P40LD-T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RM40P40LD-T and other electronic components in the MOSFETs category and beyond.

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RM40P40LD P-Channel Enhancement Mode Power MOSFET Description The RM40P40LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features V =-40V,I =-40A Schematic diagram DS D R <14m V =-10V DS(ON) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Marking and pin assignment Uninterruptible power supply Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM40P40LDV 100% UIS TESTED 100% Vds TESTED TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 40P40 RM40P40LD TO-252-2L - -- Absolute Maximum Ratings (T =25 unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage -40 V VDS Gate-Source Voltage 20 V VGS Drain Current-Continuous I -40 A D Drain Current-Continuous(T =100)I (100 ) -25 A C D Pulsed Drain Current -50 A I DM Maximum Power Dissipation 80 W P D Derating factor 0.53 W/ (Note 5) Single pulse avalanche energy E 544 mJ AS Operating Junction and Storage Temperature Range -55 To 175 T ,T J STG 2018-10/15 REV:A Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case R 1.88 /W JC Electrical Characteristics (T =25 unless otherwise noted) C Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV V =0V I=-250 A -40 - - V DSS GS D Zero Gate Voltage Drain Current I V =-40V,V=0V - - -1 A DSS DS GS Gate-Body Leakage Current I V =20V,V=0V - - 100 nA GSS GS DS (Note 3) On Characteristics Gate Threshold Voltage V V =V ,I=-250 A -1.5 -1.9 -3.0 V GS(th) DS GS D Drain-Source On-State Resistance R V =-10V, I=-12A - 12 14 m DS(ON) GS D Forward Transconductance g V =-5V,I=-12A 34 - - S FS DS D (Note4) Dynamic Characteristics Input Capacitance C - 2960 - PF lss V =-20V,V =0V, DS GS Output Capacitance C - 370 - PF oss F=1.0MHz Reverse Transfer Capacitance C - 310 - PF rss (Note 4) Switching Characteristics Turn-on Delay Time t - 10 - nS d(on) Turn-on Rise Time t - V =-20V,I =-20A 18 - nS r DD D Turn-Off Delay Time t - V =-10V,R =3 38 - nS GS G d(off) Turn-Off Fall Time t - 24 - nS f Total Gate Charge Q - 72 nC g V =-20,I =-12A, DS D Gate-Source Charge Q - 14 nC gs V =-10V GS Gate-Drain Charge Q - 15 nC gd Drain-Source Diode Characteristics (Note 3) Diode Forward Voltage V V =0V,I=-20A - -1.2 V SD GS S (Note 2) Diode Forward Current I - - -40 A S Reverse Recovery Time t - TJ = 25C, IF =- 20A 40 nS rr (Note3) Reverse Recovery Charge di/dt = -100A/ s Qrr - 42 nC Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. E condition: Tj=25 ,V =-20V,V =-10V,L=1mH,Rg=25 ,I =33A AS DD G AS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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