Product Information

70V07L35PFGI

70V07L35PFGI electronic component of Renesas

Datasheet
SRAM 32Kx8, 256K, 3.3V DUAL-PORT RAM

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

45: USD 39.129 ea
Line Total: USD 1760.8

0 - Global Stock
MOQ: 45  Multiples: 45
Pack Size: 45
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 45
Multiples : 45

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70V07L35PFGI
Renesas

45 : USD 67.7713

0 - WHS 2


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

70V07L35PFGI
Renesas

1 : USD 64.2703
10 : USD 57.8599
25 : USD 56.5964

     
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70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features IDT70V07 easily expands data bus width to 16 bits or more True Dual-Ported memory cells which allow simultaneous using the Master/Slave select when cascading more than access of the same memory location one device High-speed access M/S = VIH for BUSY output flag on Master Commercial: 25/35/55ns (max.) M/S = VIL for BUSY input on Slave Industrial: 35ns (max.) On-chip port arbitration logic Low-power operation Full on-chip hardware support of semaphore signaling IDT70V07S between ports Active: 300mW (typ.) Fully asynchronous operation from either port Standby: 3.3mW (typ.) TTL-compatible, single 3.3V (0.3V) power supply IDT70V07L Available in 68-pin PGA and a 80-pin TQFP Active: 300mW (typ.) Industrial temperature range (-40C to +85C) is available Standby: 660W (typ.) for selected speeds Interrupt Flag Green parts available, see ordering information Functional Block Diagram OER OEL CER CEL R/WR R/WL I/O0L-I/O7L I/O0R-I/O7R I/O I/O Control Control , (1,2) (1,2) BUSYL BUSYR A14R A14L Address MEMORY Address Decoder ARRAY Decoder A0L A0R 15 15 ARBITRATION CEL INTERRUPT CER SEMAPHORE OEL OER LOGIC R/WR R/WL SEML SEMR M/S (2) (2) INTR INTL 2943 drw 01 NOTES: 1. (MASTER): BUSY is output (SLAVE): BUSY is input. 2. BUSY and INT outputs are non-tri-stated push-pull. JULY 2019 1 DSC 2943/1170V07S/L High-Speed 32K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges address, and I/O pins that permit independent, asynchronous access for Description reads or writes to any location in memory. An automatic power down The IDT70V07 is a high-speed 32K x 8 Dual-Port Static RAM. The feature controlled by CE permits the on-chip circuitry of each port to enter IDT70V07 is designed to be used as a stand-alone 256K-bit Dual-Port a very low standby power mode. RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit- Fabricated using CMOS high-performance technology, these devices or-more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM typically operate on only 300mW of power. approach in 16-bit or wider memory system applications results in full- The IDT70V07 is packaged in a ceramic 68-pin PGA and a 80-pin speed, error-free operation without the need for additional discrete logic. thin quad flatpack (TQFP). This device provides two independent ports with separate control, (1,2,3) Pin Configurations 10/25/01 INDEX 98 76 5 4 3 21 68676665 64 63 62 61 60 I/O2L A5L 10 59 I/O3L A4L 11 I/O4L 58 A3L 12 57 I/O5L 13 A2L 56 GND 14 A1L 55 I/O6L 15 A0L IDT70V07J (4) 54 I/O7L INTL 16 J68-1 VCC 53 BUSYL 17 68-Pin PLCC 52 GND 18 GND (5) Top View 51 I/O0R 19 M/S 50 I/O1R BUSYR 20 49 I/O2R INTR 21 48 VCC 22 A0R I/O3R 47 23 A1R 46 I/O4R 24 A2R 45 I/O5R 25 A3R 44 I/O6R A4R 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 2943 drw 02 NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground. 3. J68-1 package body is approximately .95 in x .95 in x .17 in. 4. This package code is used to reference the package diagram. 5. This text does not indicate orientation of the actual part-marking. 2 I/O7R I/O1L N/C I/O0L OER N/C R/WR OEL SEMR R/WL CER SEML A14R CEL A13R A14L GND A13L A12R VCC A11R A12L A10R A11L A9R A10L A8R A9L A7R A8L A6R A7L A5R A6L

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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