Product Information

F1241NBGI

F1241NBGI electronic component of Renesas

Datasheet
RF Amplifier Low Noise Dual VGA 20dB 31dB 5Bit

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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F1241NBGI
Renesas

1 : USD 22.1625
10 : USD 19.5588
25 : USD 18.7483
80 : USD 16.5189
N/A

Obsolete
0 - WHS 2

MOQ : 490
Multiples : 490

Stock Image

F1241NBGI
Renesas

490 : USD 13.9534
N/A

Obsolete
0 - WHS 3

MOQ : 490
Multiples : 490

Stock Image

F1241NBGI
Renesas

490 : USD 13.0065
980 : USD 12.5005
2940 : USD 12.19
5390 : USD 12.029
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Packaging
Series
Brand
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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IDTF1241 DATASHEET Dual IF Digital Variable Gain Amplifier 10 500 MHz IDTF1241NBGI FEATURES GENERAL DESCRIPTION Ideal for systems with high SNR requirements The IDTF1241 (1 dB steps) is an IF VGA for Diversity 20 dB typical Maximum Gain Basestation receivers. The device offers significantly 5-bit, 1 dB step, 31 dB gain control range better Noise and Distortion performance than currently Excellent Noise Figure = 4.0 dB Excellent Noise Figure = 4.0 dB available devices. It is packaged in a compact 5x5 5mm x 5mm 32 pin package Thin QFN with 200 ohm differential input and output 200 Differential Matched Input impedances for ease of integration into the receiver 200 Differential Matched Output lineup. No termination resistors required NNFF ddeeggrraaddeess jjuusstt 11..33 ddBB 1100 ddBB bbeellooww MMaaxx GGaaiinn COMPETITIVE ADVANTAGE 10 MHz 500 MHz frequency range Ultra-Linear: IP3 +48 dBm typical IP3 +48 dBm OO The IDTF1241 IF VGA improves system Signal-to-Noise nd Excellent 2 Harmonic Rejection < -80 dBc Ratio (SNR), especially at lower gain settings. Via IDTs Parallel Control TM proprietary FlatNoise technology both IIPP33 && NNFF aarree O O External current setting resistors kkeepptt vviirrttuuaallllyy ffllaatt while gain is backed Very fast settling < 15 nsec off, enhancing SNR significantly under Individual Power Down Modes high level interferer conditions, and Extremely Low Power: 8800 mmAA // CChhaann TM TM FlatNoise greatly benefiting 2G/3G/4G Multi- FlatNoise Carrier IF sampling receivers. APPLICATIONS The fast-settling gain step of 1 dB coupled with pinpoint accuracy allow for SNR to be maximized further by Base Station 2G, 3G, 4G, TDD radiocards targeting the minimum necessary gain in small, accurate Repeaters and E911 systems increments. Digital Pre-Distortion Point to Point Infrastructure See the Applications Information section starting on Public Safety Infrastructure Page 17 for more details of the benefits of the F1241 in WIMAX Receivers and Transmitters IF sampling receivers. Military Systems, JTRS radios PART MATRIX DEVICE BLOCK DIAGRAM Range / IF freq Pinout Part IP3 NF O range Compatibility Step 2200 ttoo --1111 FF11224411 4488 1100 -- 550000 44 AADDII 11..00 AMP ATTN out A In A 20 to -11.5 F1240 47 10 - 500 4 TI (NSM) 0.5 10 Gain V CC Control STBYA Bias Decode ORDERING INFORMATION Control Logic STBY B 2 V Omit IDT Tape & CC I SET 0.8 mm height prefix Reel package AMP ATTN IDTF1241NBGI8 out B In B Green RF product Line Industrial Temp range TM IDT FlatNoise IF VGA 1 Rev O Nov 2012 IDTF1241 DATASHEET Dual IF Digital Variable Gain Amplifier 10 500 MHz IDTF1241NBGI ABSOLUTE MAXIMUM RATINGS V to GND -0.3V to +5.5V CC GA 5:1 , GB 5:1 , STBY , STBY -0.3V to (VCC + 0.25V) A B OUT A-, OUT A+, OUT B-, OUT B+ -0.3V to (VCC + 0.25V) IN A-, IN A+, IN B-, IN B+ -0.3V to +2.2V ISET A, ISET B to GND -0.3V to +2.2V RF Input Power (IN A-, IN A+, IN B-, IN B+) G +15 dBm MAX Continuous Power Dissipation 1.5W (Junction Ambient) +40C/W JA (Junction Case) The Case is defined as the exposed paddle +3C/W JC Operating Temperature Range (Case Temperature) T = -40C to +100C C Maximum Junction Temperature 150C Storage Temperature Range -65C to +150C Lead Temperature (soldering, 10s) . +260C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD Caution This product features proprietary protection circuitry. However, it may be damaged if subjected to high energy ESD. Please use proper ESD precautions when handling to avoid damage or loss of performance. TRUTH TABLE Gain Set Gain Code Gain Set Gain Code Gain Set Gain Code Target CodeWord Name Target CodeWord Name Target CodeWord Name 20 00000 G 9 01010 G -2 10110 G 20 9 -2 19 00001 G 8 01011 G -3 10111 G 19 8 -3 18 00010 G 7 01100 G -4 11000 G 18 7 -4 17 00011 G 6 01101 G -5 11001 G 17 6 -5 16 00100 G 5 01110 G -6 11010 G 16 5 -6 15 00101 G 4 01111 G -7 11011 G 15 4 -7 14 00110 G 3 10000 G -8 11100 G 14 3 -8 13 00111 G 2 10001 G -9 11101 G 13 2 -9 12 01000 G 1 10010 G -10 11110 G 12 1 -10 11 01001 G 0 10011 G -11 11111 G 11 0 -11 10 01010 G -1 10100 G 10 -1 TM IDT FlatNoise IF VGA 2 Rev O Nov 2012

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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