Product Information

F1420NLGK8

F1420NLGK8 electronic component of Renesas

Datasheet
RF Amplifier RF Amplifier 700MHz to 1.1GHz

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 3.5261 ea
Line Total: USD 8815.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 2500
Multiples : 2500

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F1420NLGK8
Renesas

2500 : USD 3.174
5000 : USD 3.174
10000 : USD 3.1395

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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RF Amplifier F1420 700MHz to 1.1GHz Datasheet Description Features The F1420 is a high gain / high linearity RF amplifier used in high- Broadband 700MHz to 1.1GHz performance RF applications. The F1420 provides 17.4dB gain 17.4dB typical gain at 960MHz with +42dBm OIP3 and 4.5dB noise figure at 960MHz. This device 4.5dB noise figure at 960MHz uses a single 5V supply and 105mA of I . CC +42dBm OIP3 at 960MHz In typical base stations, RF amplifiers are used in the RX and TX +23.2dBm output P1dB at 960MHz traffic paths to boost signal levels. The F1420 amplifier offers very Single 5V supply voltage high reliability due to its construction using silicon die in a QFN I = 105mA CC package. -40C to +105C operating temperature Competitive Advantage 50 single-ended input / output impedances In typical base stations, RF amplifiers are used in the RX and TX Standby mode for power savings traffic paths to boost signal levels. The F1420 amplifier offers very 4mm x 4mm, 24-pin QFN package high reliability due to its construction using silicon die in a QFN package. Block Diagram Typical Applications Figure 1. Block Diagram Multi-mode, multi-carrier transmitters GSM850/900 base stations PCS1900 base stations TM DCS1800 base stations Zero-Distortion WiMAX and LTE base stations UMTS/WCDMA 3G base stations RF IN RF OUT PHS/PAS base stations Public safety infrastructure STBY V CC 2018 Integrated Device Technology, Inc. 1 Rev O January 23, 2018 F1420 Datasheet Pin Assignments Figure 2. Pin Assignments for 4mm x 4mm x 0.9mm QFN Package Top View 1 NC 18 NC EPAD 2 NC 17 NC 3 NC 16 NC NC 4 15 GND RFOUT NC 5 14 Control Circuit GND NC 6 13 Pin Descriptions Table 1. Pin Descriptions Number Name Description 1 - 7, 12, No internal connection. These pins can be left unconnected, have a voltage applied, or be connected to 16 - 19, 20, NC ground (recommended). 24 Standby (HIGH = device power OFF, LOW/Open = device power ON). Internally this pin has a pull-down 8 STBY resistor that is connected to GND. 9 RSET Amplifier bias current setting resistor. Connect 2.26k resistor to ground. 10 RDSET Amplifier 2nd bias current setting resistor. Connect 5.76k resistor to ground. 11 V Power Supply for the Amplifier. CC 13, 15, 21, GND Internally grounded. These pins must be grounded as close to the device as possible. 23 14 RFOUT RF output. Must use external DC block as close to the pin as possible. RF input internally matched to 50 . Must use external DC block. DC block should be placed as close to 22 RFIN the pin for best RF performance. Exposed paddle. Internally connected to ground. Solder this exposed paddle to a printed circuit board EPAD (PCB) pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the specified RF performance. 2018 Integrated Device Technology, Inc. 2 Rev O January 23, 2018 7 24 NC NC 8 23 STBY GND RSET 9 22 RFIN RDSET 10 21 GND V 11 20 NC CC NC 12 19 NC

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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