Product Information

F1956NBGI8

F1956NBGI8 electronic component of Renesas

Datasheet
Attenuators 7-Bit 0.25dB WideB 31.5dB Attenuator

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.1484 ea
Line Total: USD 7.15

4458 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4458 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

F1956NBGI8
Renesas

1 : USD 7.1484
10 : USD 6.5688
25 : USD 6.0496
100 : USD 5.5907
250 : USD 5.3492
500 : USD 4.9266
1000 : USD 4.4798
2500 : USD 4.4798
5000 : USD 4.335

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Maximum Attenuation
Maximum Frequency
Number of Bits
Number of Channels
Impedance
Package / Case
Maximum Operating Temperature
Minimum Operating Temperature
Attenuator Step Size
Technology
Packaging
Series
Type
Brand
Insertion Loss
Mounting Style
Minimum Frequency
Operating Supply Voltage
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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F1956 Datasheet 7-Bit 0.25dB Wideband Digital Step Attenuator 1 to 6000 MHz DESCRIPTION FEATURES This document describes the specification for the Serial and 7-bit Parallel Interface F1956 Digital Step Attenuator. The F1956 is part of 31.75dB Range TM Renesas Glitch-Free family of DSAs optimized for the 0.25dB steps TM demanding requirements of Base Station (BTS) radio Glitch-Free : low transient overshoot cards and numerous other non-BTS applications. This 500ns settling time device is offered in compact 5 x 5 mm 32-pin package Ultra linear > 64dBm IIP3 with 50 input and output impedance for ease of Low Insertion Loss < 1.7dB at 4GHz integration into the radio or RF system. Attenuation error < 0.2dB at 4GHz Bi-directional RF use COMPETITIVE ADVANTAGE 3.3V or 5V Supply 1.8V or 3.3V control logic The F1956 offers very high reliability due to its Low Current Consumption: 350A typical construction from a monolithic silicon die in a QFN -40C to +105C operating temperature package. The insertion loss is very low with minimal 5 x 5 mm thin 32-QFN package distortion. Additionally the device is designed to have extremely accurate attenuations levels. These accurate attenuation level improves system SNR and/or ACLR by ensuring system gain is as close to FUNCTIONAL BLOCK DIAGRAM targeted level as possible. Also, the very fast settling time in parallel mode is ideal for fast switching TM systems. Finally, the device is Glitch-Free with less than 2dB of ringing across the attenuation range in stark contrast to competing DSAs that glitch as much RF 1 RF 2 as 10dB during MSB state changes. Lowest insertion loss for best SNR TM Glitch-Free technology to protect PA or ADC during transitions between attenuation Bias Decoder SPI states. Extremely accurate attenuation levels Ultra low distortion V MODE D 6:0 A 2:0 CLK DATA LE MSL1 and 2000V HBM ESD Part Details ORDERING INFORMATION Freq Range IL Resolution / Tape & Part Control Pinout Range (dB) (MHz) (dB) Reel PE43702 Parallel & F1950 150 - 4000 0.25 / 31.75 1.3 Serial PE43701 F1956NBGI8 Serial F1951 100 - 4000 0.50 / 31.5 1.2 HMC305 Only Green Serial F1952 100 4000 0.50 / 15.5 0.9 HMC305 Only Parallel & PE4302 F1953 400 4000 0.50 / 31.5 1.3 Serial DAT-31R5 PE43705, Parallel & F1956 1 - 6000 0.25 / 31.75 1.4 PE43712, Serial RFSA3715 Parallel & PE4312 F1912 1 4000 0.50 / 31.5 1.6 Serial PE4302 2021 Renesas Electronics Corporation 1 February 23, 2021 F1956 Datasheet ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VDD to GND VDD -0.3 +5.5 V Min (V + DD D 6:0 , DATA, CLK, LE, A0, A1, A2, V VCNTL -0.3 V MODE 0.3, 3.9) RF1, RF2 VRF -0.3 +0.3 V Maximum Input Power applied P +34 dBm RF to RF1 or RF2 (>100 MHz) Operating Case Temperature 105 C Continuous Power Dissipation 1.5 W Maximum Junction Temperature TJmax +150 C Storage Temperature Range T -65 +150 C ST Lead Temperature (soldering, 10s) TLEAD +260 C Electrostatic Discharge HBM 1500 V V ESDHBM (JEDEC/ESDA JS-001-2012) (Class 1C) 500 ESD Voltage CDM (Per JESD22-C101F) VESDCDM V (Class C2) Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTION This product features proprietary protection circuitry. However, it may be damaged if subjected to high energy ESD. Please use proper ESD precautions when handling to avoid damage or loss of performance. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS (Junction Ambient) 40C/W JA (Junction Case) The Case is defined as the exposed paddle 4C/W JC Moisture Sensitivity Rating (Per J-STD-020) MSL1 2021 Renesas Electronics Corporation 2 February 23, 2021

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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