Product Information

R1EX25008ASA00I#S0

R1EX25008ASA00I#S0 electronic component of Renesas

Datasheet
EEPROM Serial EEPROM 8k, SPI, SOP8, I-grade

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.1138 ea
Line Total: USD 2784.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 1.0428
5000 : USD 1.0236
10000 : USD 1.0092
25000 : USD 1.0008

     
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RMLV0414E Series 4Mb Advanced LPSRAM (256-kword 16-bit) R10DS0216EJ0300 Rev.3.00 2021.8.18 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word 16-bit, fabricated by Renesass high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II). Features Single 3V supply: 2.7V to 3.6V Access time: 45ns (max.) Current consumption: Standby: 0.3A (typ.) Equal access and cycle times Common data input and output Three state output Directly TTL compatible All inputs and outputs Battery backup operation Orderable part number information Access Temperature Part name Package Shipping container time range Tray RMLV0414EGSB-4S2 AA * 400-mil 44pin 45 ns -40 ~ +85C plastic TSOP (II) Embossed tape RMLV0414EGSB-4S2 HA * Note 1. = Revision code for Assembly site change, etc. ( = 0, 1, etc.) * * R10DS0216EJ0300 Rev.3.00 Page 1 of 12 2021.8.18 RMLV0414E Series Pin Arrangement 44pin TSOP (II) A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 40 UB CS 6 39 LB I/O0 7 38 I/O15 I/O1 8 37 I/O14 I/O2 9 36 I/O13 I/O3 10 35 I/O12 Vcc 11 34 Vss Vss 12 33 Vcc I/O4 13 32 I/O11 I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O7 16 29 I/O8 WE 17 28 NC A17 18 27 A8 A16 19 26 A9 A15 20 25 A10 A14 21 24 A11 A13 22 23 A12 (Top view) Pin Description Pin name Function V Power supply CC VSS Ground A0 to A17 Address input I/O0 to I/O15 Data input/output CS Chip select OE Output enable WE Write enable LB Lower byte select UB Upper byte select NC No connection R10DS0216EJ0300 Rev.3.00 Page 2 of 12 2021.8.18

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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