Preliminary Datasheet RJK0332DPB-01 R07DS0268EJ0500 (Previous: REJ03G1641-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 3.6 m typ. (at V = 10 V) DS(on) GS Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 35 A D Note1 Drain peak current I 140 A D(pulse) Body-drain diode reverse drain current I 35 A DR Note 2 Avalanche current I 15 A AP Note 2 Avalanche energy E 22.5 mJ AR Note3 Channel dissipation Pch 45 W Note3 Channel to case thermal resistance ch-c 2.78 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0268EJ0500 Rev.5.00 Page 1 of 6 Mar 01, 2011 RJK0332DPB-01 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 3.6 4.7 m I = 17.5 A, V = 10 V DS(on) D GS Note4 resistance R 5.0 7.0 m I = 17.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 70 S I = 17.5 A, V = 10 V fs D DS Input capacitance Ciss 2180 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 420 pF Reverse transfer capacitance Crss 140 pF Gate Resistance Rg 0.7 Total gate charge Qg 14 nC V = 10 V, V = 4.5 V, DD GS I = 35 A D Gate to source charge Qgs 5.1 nC Gate to drain charge Qgd 3.0 nC Turn-on delay time t 5.8 ns V = 10 V, I = 17.5 A, d(on) GS D V 10 V, R = 0.57 , Rise time t 3.8 ns DD L r Rg = 4.7 Turn-off delay time t 40 ns d(off) Fall time t 4.4 ns f Note4 Bodydrain diode forward voltage V 0.83 1.08 V I = 35 A, V = 0 DF F GS Bodydrain diode reverse recovery t 25 ns I = 35 A, V = 0 rr F GS time di / dt = 100 A/ s F Bodydrain diode reverse recovery Qrr 19 nC charge Notes: 4. Pulse test R07DS0268EJ0500 Rev.5.00 Page 2 of 6 Mar 01, 2011