RJK0349DSP Silicon N Channel Power MOS FET Power Switching REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.9 m typ. (at V = 10 V) DS(on) GS Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 56 7 8 D D 5 DD 6 7 8 1, 2, 3 Source 4 4 3 2 4 Gate G 1 5, 6, 7, 8 Drain SS S 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 20 A D Note1 Drain peak current I 160 A D(pulse) Body-drain diode reverse drain current I 20 A DR Note 2 Avalanche current I 20 A AP Note 2 Avalanche energy E 40 mJ AR Note3 Channel dissipation Pch 2.5 W Note3 Channel to ambient thermal impedance ch-a 50 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Page 1 of 6 RJK0349DSP Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 2.9 3.8 m I = 10 A, V = 10 V DS(on) D GS Note4 resistance R 3.6 5.0 m I = 10 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 55 S I = 10 A, V = 10 V fs D DS Input capacitance Ciss 3850 pF V = 10 V DS V = 0 GS Output capacitance Coss 740 pF f = 1 MHz Reverse transfer capacitance Crss 240 pF Gate Resistance Rg 1.5 Total gate charge Qg 25 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 9.5 nC I = 20 A D Gate to drain charge Qgd 5.3 nC Turn-on delay time t 11 ns V = 10 V, I = 10 A d(on) GS D V 10 V Rise time t 4.7 ns DD r R = 1.00 L Turn-off delay time t 58.5 ns d(off) Rg = 4.7 Fall time t 9.8 ns f Note4 Bodydrain diode forward voltage V 0.78 1.02 V I = 20 A, V = 0 DF F GS Bodydrain diode reverse recovery t 30 ns I = 20 A, V = 0 rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Page 2 of 6