Preliminary Datasheet RJK0346DPA 30V, 65A, 2.0m max. R07DS0911EJ0400 N Channel Power MOS FET Rev.4.00 High Speed Power Switching Mar 19, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 56 7 8 D DD D 6 7 8 5 4 1, 2, 3 Source 4 Gate G 1 4 3 2 5, 6, 7, 8 Drain SS S 12 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 65 A D Note1 Drain peak current I 260 A D(pulse) Body-drain diode reverse drain current I 65 A DR Note 2 Avalanche current I 35 A AP Note 2 Avalanche energy E 122.5 mJ AR Note3 Channel dissipation Pch 65 W Channel to Case Thermal Resistance ch-C 1.92 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0911EJ0400 Rev.4.00 Page 1 of 6 Mar 19, 2013 RJK0346DPA Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 1.5 2.0 m I = 32.5 A, V = 10 V DS(on) D GS Note4 resistance R 1.9 2.7 m I = 32.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 130 S I = 32.5 A, V = 10 V fs D DS Input capacitance Ciss 7650 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 1500 pF Reverse transfer capacitance Crss 470 pF Gate Resistance Rg 1.2 Total gate charge Qg 49 nC V = 10 V, V = 4.5 V, DD GS I = 65 A D Gate to source charge Qgs 18.7 nC Gate to drain charge Qgd 10.5 nC Turn-on delay time t 15 ns V = 10 V, I = 32.5 A, d(on) GS D V 10 V, R = 0.31 , Rise time t 7 ns DD L r Rg = 4.7 Turn-off delay time t 86.5 ns d(off) Fall time t 20 ns f Note4 Bodydrain diode forward voltage V 0.80 1.04 V I = 65 A, V = 0 DF F GS Bodydrain diode reverse recovery t 45 ns I = 65 A, V = 0 rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test R07DS0911EJ0400 Rev.4.00 Page 2 of 6 Mar 19, 2013