Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0400 Silicon N Channel MOS FET Rev.4.00 Power Switching Jan 10, 2014 Features High drain to source voltage and Low gate drive V : 250 V and 2.5 V gate drive DSS Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1. Source G 1 2. Gate 3. Drain 2 S 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 250 V DSS Gate to source voltage V 10 V GSS Drain current I 0.4 A D Note1 Drain peak current I 1.6 A D(pulse) Body - drain diode reverse drain current I 0.4 A DR Note2 Channel dissipation Pch 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 40 1 mm) R07DS0312EJ0400 Rev.4.00 Page 1 of 8 Jan 10, 2014 RQK2501YGDQA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 250 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V +10 V I = +100 A, V = 0 (BR)GSS G DS Gate to source breakdown voltage V 10 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I +10 A V = +8 V, V = 0 GSS GS DS Gate to source leak current I 10 A V = 8 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 250 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.5 1.5 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 4.0 5.4 I = 0.2 A, V =4 V DS(on) D GS Note3 Drain to source on state resistance R 4.1 5.6 I = 0.2 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 0.6 0.95 S I = 0.2 A, V = 10 V fs D DS Input capacitance Ciss 80 pF V = 25 V DS V = 0 Output capacitance Coss 10 pF GS f = 1 MHz Reverse transfer capacitance Crss 3 pF Turn - on delay time t 15 ns V = 125 V,V = 4 V d(on) DD GS I = 0.2 A D Rise time t 16 ns r R = 625 L Turn - off delay time t 40 ns d(off) Rg = 10 Fall time t 38 ns f Total gate charge Qg 4.0 nC V = 200 V DD V = 4 V GS Gate to Source charge Qgs 0.5 nC I = 0.4 A D Gate to drain charge Qgd 2.6 nC Note3 Body - drain diode forward voltage V 0.8 1.2 V I = 0.4 A, V = 0 DF F GS Notes: 3. Pulse test R07DS0312EJ0400 Rev.4.00 Page 2 of 8 Jan 10, 2014