2SAR573D3 PNP -3.0A -50V Power Transistor Datasheet llOutline Parameter Value DPAK V -50V CEO I -3A C TO-252 llFeatures llInner circuit 1) Suitable for Power Driver. 2) Complementary NPN Types : 2SCR573D3. 3) Low V CE(sat) V =-400mV(Max.). CE(sat) (I /I =-1A/-50mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Taping Reel size Tape width Quantity Part No. Package Marking code (mm) (mm) (pcs) TL1 TO-252 2SAR573D3 330 16 2500 2SAR573D3 (DPAK) TL www.rohm.com 1/7 20191008 - Rev.004 2019 ROHM Co., Ltd. All rights reserved. 2SAR573D3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I -3 A C Collector current *1 I -6 A CP *2 P Power dissipation 10 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -100A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -100A -6 - - V EBO E Collector cut-off current I V = -50V - - -1 A CBO CB I Emitter cut-off current V = -4V - - -1 A EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -200 -400 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 180 - 450 - FE CE C V = -10V, I = 200mA, CE E *3 Transition frequency - 300 - MHz f T f = 100MHz V = -10V, I = 0A, CB E Output capacitance C - 35 - pF ob f = 1MHz t Turn-On time I = -1.5A, - 50 - ns on C I = -150mA, B1 I = 150mA, B2 t Storage time - 450 - ns stg V -10V, CC R = 6.8 L t Fall time - 100 - ns f See test circuit *1 Pw=10ms Single Pulse *2 Tc=25 *3 Pulsed www.rohm.com 2/7 20191008 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.