Product Information

2SB1183TL

2SB1183TL electronic component of ROHM

Datasheet
ROHM Semiconductor Darlington Transistors DVR PNP 40V 2A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.4453 ea
Line Total: USD 1113.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.4658
5000 : USD 0.4658
10000 : USD 0.4474
25000 : USD 0.4462

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

2SB1183 / 2SB1239 Transistors Power transistor (40V, 2A) 2SB1183 / 2SB1239 External dimensions (Units : mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM : CPT3 (1) Base(Gate) RBE 4k (2) Collector(Drain) EIAJ : SC-63 (3) Emitter(Source) C : Collector E B : Base E : Emitter 2SB1239 2.5 6.8 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 0.65Max. Collector-base voltage VCBO 40 V Collector-emitter voltage VCER 40 V 0.5 Emitter-base voltage VEBO 5 V 2 A(DC) ( ) (2) (3) 1 Collector current IC 1 3 A(Pulse) 2.54 2.54 1.05 0.45 1 W Collector power 2SB1183 PC 10 W(Tc=25C) dissipation Taping specifications 2 2SB1239 1W Junction temperature Tj 150 C ROHM : ATV (1) Emitter Storage temperature Tstg 55~+150 C (2) Collector 1 Single pulse Pw=10ms 2 2 Printed circuit board 1.7 mm thick, collector plating 100mm or larger. (3) Base Packaging specifications and hFE Type 2SB1183 2SB1239 Package CPT3 ATV hFE 1k~200k 1k~ Code TL T146 Basic ordering unit (pieces) 2500 2500 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage 40 V BVCBO IC=50 A Collector-emitter breakdown voltage BVCER 40 V IC=1mA, RBE=10k Emitter-base breakdown voltage BVEBO 5 V IE=50 A Collector cutoff current ICBO 1 A VCB=24V Emitter cutoff current IEBO 1 A VEB=4V Collector-emitter saturation voltage VCE(sat) 1.5 V IC/IB=0.6A/1.2mA 2SB1183 1000 20000 DC current hFE VCE/IC=2V/0.5A transfer ratio 2SB1239 1000 Output capacitance Cob 11 pF VCB=10V, IE=0A, f=1MHz 1.0 ( ) ( ) ( ) 3 2 1 0.5 2.3 2.3 0.9 0.65 0.75 1.0 0.9 14.5 4.4 0.5 5.1 2.3 6.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Darlington Transistors category: Click to view products by ROHM manufacturer: Other Similar products are found below : NJVMJD128T4G 281287X BDV64B NJVMJD117T4G LB1205-L-E 2N6053 MPSA14 TIP140 MPSA13 TIP127L-BP 2N6383 ULN2003ACM/TR 2N7371 2N6058 2N6059 2N6051 MJ2501 MJ3001 2SB1560 2SB852KT146B 2SD2560 TIP112TU BCV27 MMBTA13-TP MMSTA28T146 NTE2557 NJVNJD35N04T4G MPSA29-D26Z FJB102TM BSP61H6327XTSA1 BU941ZPFI 2SD1980TL NTE2350 NTE245 NTE246 NTE2649 NTE46 NTE98 ULN2003ADR2G NTE2344 NTE2349 NTE2405 NTE243 NTE244 NTE247 NTE248 NTE249 NTE253 NTE2548 NTE261

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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