Product Information

2SB1474TL

2SB1474TL electronic component of ROHM

Datasheet
ROHM Semiconductor Darlington Transistors DARL PNP 80V 4A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.4453 ea
Line Total: USD 1113.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 2500
Multiples : 2500
2500 : USD 0.3749
5000 : USD 0.3611
10000 : USD 0.3553
25000 : USD 0.3531

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

2SB1474 Transistor Power Transistor (80V, 4A) 2SB1474 Features External dimensions (Units : mm) 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 5.5 1.5 3) Built-in damper doide. 0.9 C0.5 Absolute maximum ratings (Ta=25C) 0.8Min. (1) Base 1.5 2.5 (2) Collector ROHM : CPT3 9.5 Parameter Symbol Limits Unit (3) Emitter EIAJ : SC-63 Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 V -4 A(DC) Collector current IC -6 A * 1 W Collector power dissipation PC 10 W (Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C Single pulse, Pw=100ms * Packaging specifications and hFE Type 2SB1474 Package CPT3 hFE 1k~10k Code TL Basic ordering unit (pieces) 2500 Equivalent circuit C B R1 R2 E R1 3k B : Base C : Collector R2 300 E : Emitter Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -80 - - V IC=-50 A Collector-emitter breakdown voltage BVCEO -80 - - V IC=-1mA Collector cutoff current ICBO - - -100 A VCB=-80V Emitter cutoff current IEBO - - -3 mA VEB=-5V Collector-emitter saturation voltage VCE(sat) - -1 -1.5 V IC/IB=-2A/-4mA 1 * DC current transfer ratio hFE 1000 5000 10000 - VCE/IC=-3V/-2A 1 * Transition frequency fT - 12 - MHz VCE=-5V, IE=0.5A, f=10MHz 2 * Output capacitance Cob - 45 - pF VCB=-10V, IE=0A, f=1MHz 1 Measured using pulse current. 2 Transition frequency of the device. * * 1.0 (3) (2) (1) 0.5 2.3 2.3 0.9 0.65 0.75 0.5 5.1 2.3 6.5X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Darlington Transistors category: Click to view products by ROHM manufacturer: Other Similar products are found below : NJVMJD128T4G 281287X BDV64B NJVMJD117T4G LB1205-L-E 2N6053 MPSA14 TIP140 MPSA13 TIP127L-BP 2N6383 ULN2003ACM/TR 2N7371 2N6058 2N6059 2N6051 MJ2501 MJ3001 2SB1560 2SB852KT146B 2SD2560 TIP112TU BCV27 MMBTA13-TP MMSTA28T146 NTE2557 NJVNJD35N04T4G MPSA29-D26Z FJB102TM BSP61H6327XTSA1 BU941ZPFI 2SD1980TL NTE2350 NTE245 NTE246 NTE2649 NTE46 NTE98 ULN2003ADR2G NTE2344 NTE2349 NTE2405 NTE243 NTE244 NTE247 NTE248 NTE249 NTE253 NTE2548 NTE261

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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