2SB1695KT146 ROHM

2SB1695KT146 electronic component of ROHM
2SB1695KT146 ROHM
2SB1695KT146 Bipolar Transistors - BJT
2SB1695KT146  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SB1695KT146 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1695KT146 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SB1695KT146
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 30V 1.5A
Datasheet: 2SB1695KT146 Datasheet (PDF)
Price (USD)
5: USD 0.1996 ea
Line Total: USD 1 
Availability : 1988
  
Ship by Fri. 05 Sep to Wed. 10 Sep
QtyUnit Price
5$ 0.1996
50$ 0.1598
150$ 0.1048
500$ 0.0842
3000$ 0.0763
6000$ 0.0722

Availability 1988
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1996
50$ 0.1598
150$ 0.1048
500$ 0.0842
3000$ 0.0763
6000$ 0.0722


Availability 2592
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7287
10$ 0.4475
100$ 0.2645
500$ 0.2013
1000$ 0.1826
3000$ 0.1584
6000$ 0.1485
9000$ 0.1386
24000$ 0.1353


Availability 5820
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 1064
Multiples : 1
QtyUnit Price
1064$ 0.2445
1104$ 0.2357
1141$ 0.228
2500$ 0.2128
5000$ 0.207


Availability 1487
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 365
Multiples : 1
QtyUnit Price
365$ 0.7124
504$ 0.5161
1000$ 0.3458


Availability 2910
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 751
Multiples : 1
QtyUnit Price
751$ 0.3466

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1695KT146 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1695KT146 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1695K Datasheet Datasheet General purpose amplification(-30V,-1.5A) llOutline SOT-346 Parameter Value SC-59 V -30V CEO I -1.5A C SMT3 llFeatures llInner circuit 1) Collector current is large. 2) V -370mV CE(sat) at I = -1A / I = -50mA C B 3) Complementary NPN Types : 2SD2657K llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB1695K 2928 T146 180 8 3000 FL (SMT3) www.rohm.com 1/6 www.rohm.com 20161028 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. 2015 ROHM Co., Ltd. All rights reserved.Data Sheet 2SB1695K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3 A CP *2 P Power dissipation 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E I Collector cut-off current V = -30V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB *3 Collector-emitter saturation voltage V I = -1A, I = -50mA - -200 -370 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E Transition frequency f - 280 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 13 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20161028 - Rev.003 www.rohm.com 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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