X-On Electronics has gained recognition as a prominent supplier of 2SB1590KT146Q bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SB1590KT146Q bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SB1590KT146Q

2SB1590KT146Q electronic component of ROHM
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See Product Specifications
Part No.2SB1590KT146Q
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT DVR PNP 15V 1A
Datasheet: 2SB1590KT146Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4865 ea
Line Total: USD 0.49

Availability - 240
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2861 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5
Multiples : 1
5 : USD 0.6889
10 : USD 0.5661
100 : USD 0.3938
500 : USD 0.3076
1000 : USD 0.2112
5000 : USD 0.1885

240 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4865
10 : USD 0.4152
100 : USD 0.2921
500 : USD 0.2346
1000 : USD 0.1966
3000 : USD 0.1702
9000 : USD 0.1691
24000 : USD 0.1667

478 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 177
Multiples : 1
177 : USD 0.6029
250 : USD 0.5788

1891 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 177
Multiples : 1
177 : USD 0.6029
250 : USD 0.5788
500 : USD 0.5578
1000 : USD 0.5396

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the 2SB1590KT146Q Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the 2SB1590KT146Q Bipolar Transistors - BJT.

2SB1590K Datasheet Low frequency amplifier llOutline SOT-346 Parameter Value SC-59 V -15V CEO I -1A C SMT3 llFeatures llInner circuit 1)Low saturation voltage, V =-300mV(Max.) CE(sat) at I /I =-400mA/-20mA C B 2) Complementary NPN Types : 2SD2444K llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB1590K 2928 T146 180 8 3000 BK (SMT3) www.rohm.com 1/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SB1590K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -15 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -15 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -6 - - V EBO E Collector cut-off current I V = -12V - - -500 nA CBO CB Emitter cut-off current I V = -5V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -400mA, I = -20mA - - -300 mV CE(sat) C B h 1 V = -2V, I = -50mA 120 - 270 FE CE C DC current gain - h 2 V = -2V, I = -800mA 80 - - FE CE C V = -2V, I = 50mA, CE E Transition frequency f - 200 - MHz T f = 100MHz V = -10V, I = 0A, CB E Output capacitance C - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q - - - - h 1 120-270 - - - - FE *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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