2SB1590KT146Q ROHM

2SB1590KT146Q electronic component of ROHM
2SB1590KT146Q ROHM
2SB1590KT146Q Bipolar Transistors - BJT
2SB1590KT146Q  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SB1590KT146Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB1590KT146Q Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SB1590KT146Q
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT DVR PNP 15V 1A
Datasheet: 2SB1590KT146Q Datasheet (PDF)
Price (USD)
1: USD 0.8237 ea
Line Total: USD 0.82 
Availability : 230
  
Ship by Wed. 27 Aug to Fri. 29 Aug
QtyUnit Price
1$ 0.8237
10$ 0.51
100$ 0.3071
500$ 0.2299
1000$ 0.209
3000$ 0.1837
6000$ 0.1716
9000$ 0.1606
24000$ 0.1551

Availability 230
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8237
10$ 0.51
100$ 0.3071
500$ 0.2299
1000$ 0.209
3000$ 0.1837
6000$ 0.1716
9000$ 0.1606
24000$ 0.1551


Availability 459
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 423
Multiples : 1
QtyUnit Price
423$ 0.6153


Availability 1891
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 321
Multiples : 1
QtyUnit Price
321$ 0.9937

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB1590KT146Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB1590KT146Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SB1590K Datasheet Low frequency amplifier llOutline SOT-346 Parameter Value SC-59 V -15V CEO I -1A C SMT3 llFeatures llInner circuit 1)Low saturation voltage, V =-300mV(Max.) CE(sat) at I /I =-400mA/-20mA C B 2) Complementary NPN Types : 2SD2444K llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SB1590K 2928 T146 180 8 3000 BK (SMT3) www.rohm.com 1/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. 2SB1590K Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -15 V CBO V Collector-emitter voltage -15 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -15 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -15 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -6 - - V EBO E Collector cut-off current I V = -12V - - -500 nA CBO CB Emitter cut-off current I V = -5V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -400mA, I = -20mA - - -300 mV CE(sat) C B h 1 V = -2V, I = -50mA 120 - 270 FE CE C DC current gain - h 2 V = -2V, I = -800mA 80 - - FE CE C V = -2V, I = 50mA, CE E Transition frequency f - 200 - MHz T f = 100MHz V = -10V, I = 0A, CB E Output capacitance C - 15 - pF ob f = 1MHz hFE values are calssified as follows : rank Q - - - - h 1 120-270 - - - - FE *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/6 20160303 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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