2SCR346PT100Q ROHM

2SCR346P NPN 100mA 400V Middle Power Transistor Datasheet llOutline SOT-89 Parameter Value SC-62 V 400V CEO I 100mA C MPT3 llFeatures llInner circuit 1)Complementary PNP Types:2SAR340P 2)Low V CE(sat) V =300mV(Max) CE(sat) (I /I =20mA/2mA) C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-89 2SCR346P 4540 T100 180 12 1000 HK (MPT3) www.rohm.com 1/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved. 2SCR346P Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 400 V CBO Collector-emitter voltage V 400 V CEO V Emitter-base voltage 7 V EBO I 100 mA C Collector current *1 I 200 mA CP Base current I 30 mA B *2 P 0.5 W D Power dissipation *3 P 2.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 400 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 400 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 7 - - V EBO E I Collector cut-off current V = 400V - - 10 A CBO CB I Emitter cut-off current V = 6V - - 10 A EBO EB Collector-emitter saturation voltage V I = 20mA, I = 2mA - 100 300 mV CE(sat) C B DC current gain h V = 10V, I = 10mA 82 - 270 - FE CE C V = 10V, I = 0A, CB E C Output capacitance - 6 - pF ob f = 1MHz hFE values are calssified as follows : rank P Q - - - h 82-180 120-270 - - - FE *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a 40400.7mm ceramic board. www.rohm.com 2/6 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.