Low V transistor (strobe flash) CE(sat) 2SD2118 z Features z Dimensions (Unit : mm) 1) Low VCE(sat). 2SD2118 VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. z Structure Epitaxial planar type NPN silicon transistor ROHM : CPT3 (1) Base EIAJ : SC-63 (2) Collector (3) Emitter Denotes hFE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6V IC 5 A(DC) Collector current 1 ICP 10 A(Pulse) Collector power 1 W 2SD2118 PC dissipation 10 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=10ms z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 VIC=50A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=50A Collector cutoff current ICBO 0.5 A VCB=40V Emitter cutoff current IEBO 0.5 A VEB=5V Collector-emitter saturation voltage VCE(sat) 0.3 1.0 V IC/IB=4A/0.1A DC current transfer ratio hFE 120 390 VCE=2V, IC=0.5A Transition frequency fT 150 MHz VCE=6V, IE=50mA, f=100MHz Output capacitance Cob 35 pF VCE=20V, IE=0A, f=1MHz Measured using pulse current. www.rohm.com 2009.11 - Rev.C 1/3 c 2009 ROHM Co., Ltd. All rights reserved. 2SD2118 Data Sheet z Packaging specifications and hFE Package Taping Code TL Type hFE Basic ordering unit (pieces) 2500 2SD2118 QR hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 z Electrical characteristic curves 10 5 5000 VCE=2V 50mA Ta=25C Ta=25C 30mA 5 45mA 25mA 2000 20mA 2 Ta=100C 4 15mA 1000 25C 1 25C 0.5 VCE=5V 500 10mA 40mA 3 0.2 35mA 200 2V 0.1 100 0.05 1V 2 5mA 50 0.02 0.01 1 20 5m 10 2m IB=0mA 1m 0 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 DC current gain vs. Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output collector current ( ) characteristics characteristics 5000 5000 2 VCE=1V VCE=2V Ta=25C 1 2000 2000 Ta=100C Ta=100C 1000 1000 25C 25C 0.5 25C 25C 500 500 0.2 200 200 100 100 0.1 50 50 0.05 IC/IB=50 20 20 40 0.02 30 10 10 10 5 5 0.01 1m 2m 5m0.010.020.050.10.2 0.5 1 2 5 10 1m 2m 5m0.010.02 0.050.10.2 0.5 1 2 5 10 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2510 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter collector current ( ) collector current ( ) saturation voltage vs. collector current ( ) 2 2 2 lC/lB=40 lC/lB=30 lC/lB=10 1 1 1 0.5 0.5 0.5 Ta=100C Ta=100C Ta=100C 25C 0.2 0.2 25C 25C 25C 0.2 25C 25C 0.1 0.1 0.1 0.05 0.05 0.05 0.02 0.02 0.02 0.01 0.01 0.01 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.9 Collector-emitter Fig.8 Collector-emitter Fig.7 Collector-emitter saturation voltage vs. saturation voltage vs. saturation voltage vs. collector current ( ) collector current (IV) collector current ( ) www.rohm.com 2009.11 - Rev.C 2/3 c 2009 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)