2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 z External dimensions (Unit : mm) z Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to 1.0 2.5 0.5 loads. ( ) 1 (2) 3) Built-in resistor between base and emitter. (3) 4) Built-in damper diode. (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit 5.5 1.5 2SD2143 Collector-base voltage VCBO 6010 V Collector-emitter voltage VCEO 6010 V Emitter-base voltage VEBO 6 V 0.9 2 A (DC) Collector current IC 1 3 A (Pulse) 0.5 C0.5 W 2SD2212 2 2 Collector power 1 W PC dissipation 2SD2143 10 W (Tc=25C) 0.8Min. 1.5 3 2SD1866 1 W 2.5 Junction temperature Tj 150 C 9.5 Storage temperature Tstg 55 to +150 C (1) Base(Gate) 1 Single pulse Pw=100ms (2) Collector(Drain) ROHM : CPT3 2 When mounted on a 40400.7mm ceramic board. (3) Emitter(Source) 2 3 Printed circuit board 1.7mm thick, collector plating 1cm or larger. EIAJ : SC-63 2SD1866 z Packaging specifications and hFE 2.5 6.8 Type 2SD2212 2SD2143 2SD1866 Package MPT3 CPT3 ATV hFE 1k to 10k 1k to 10k 1k to 10k Marking DR Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 0.65Max. 0.5 ( ) ( ) ( ) 1 2 3 z Equivalent circuit 2.54 2.54 C 1.05 0.45 Taping specifications (1) Emitter B ROHM : ATV (2) Collector (3) Base R1 R2 E : Emitter E B : Base R1 3.5k C : Collector R2 300 Rev.A 1/3 1.0 ( ) ( ) 3 (2) 1 0.5 2.3 2.3 3.0 1.5 1.5 0.9 0.4 0.4 0.65 0.4 0.5 0.75 1.0 0.9 1.6 1.5 4.5 0.5 14.5 4.4 5.1 2.3 6.52SD2212 / 2SD2143 / 2SD1866 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 70 V IC=50A Collector-emitter breakdown voltage BVCEO 50 70 V IC=5mA Collector cutoff current ICBO 1.0 A VCB=40V Emitter cutoff current IEBO 3 mA VEB=5V Collector-emitter saturation voltage VCE(sat) 1.5 V IC/IB=1A/1mA DC current transfer ratio hFE 1000 10000 VCE=2V, IC=1A Transition frequency fT 80 MHz VCE=5V, IE= 0.1A, f=30MHz Output capacitance Cob 25 pF VCB=10V, IE=0A, f=1MHz Measured using pulse current. z Electrical characteristics curves 2.0 2.0 5 Ta=25C 500A 500A Ta=25C VCE=2V 450A 450A 1.8 1.8 2 400A 400A 1.6 350A 1.6 1 0.5 1.4 1.4 0.2 1.2 1.2 0.1 1.0 1.0 0.05 0.8 0.8 0.6 0.6 0.01 0.4 0.4 0.2 0.2 0.001 0 0 1 234 5 24 6 8 10 0.5 1 1.5 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Groundede emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics 10000 10000 100 Ta=25C VCE=2V Ta=25C 5000 5000 50 VCE=4V 2000 2000 20 1000 1000 10 500 500 VCE=2V 5 200 200 2 100 100 IC/IB=1000 1 50 50 0.5 20 20 10 10 0.2 0.001 0.01 0.1 0.2 0.5 1 2 5 10 0.001 0.01 0.1 0.2 0.5 1 2 5 10 0.01 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain Fig.5 DC current gain Fig.6 Collector-emitter saturation vs. collector current ( ) vs. collector current ( ) voltage vs. collector current Rev.A 2/3 25C 500 I B=200A 250A 300A IB=200A 250A 300A Ta=100C 25C Ta=100C 25C 25C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION COLLECTOR CURRENT : Ic (A) VOLTAGE : VCE(sat)(V)