X-On Electronics has gained recognition as a prominent supplier of 2SD882 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SD882 bipolar transistors - bjt are a product manufactured by STMicroelectronics. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SD882 STMicroelectronics

2SD882 electronic component of STMicroelectronics
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Part No.2SD882
Manufacturer: STMicroelectronics
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 3 A 100MHz 12.5 W Through Hole SOT-32 (TO-126)
Datasheet: 2SD882 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.754 ea
Line Total: USD 0.75

Availability - 871
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
528 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7715
10 : USD 0.6283
50 : USD 0.5567
100 : USD 0.5032
500 : USD 0.4602
1000 : USD 0.4386

871 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.754
42 : USD 0.4043
113 : USD 0.3822
10000 : USD 0.364

     
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2SD882 NPN medium power transistor Features High current Low saturation voltage Complement to 2SB772 Applications 1 Voltage regulation 2 3 Relay driver SOT-32 Generic switch (TO-126) Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. Table 1. Device summary Order code Marking Package Packing 2SD882 D882 SOT-32 Tube October 2007 Rev 3 1/8 www.st.com 8Absolute maximum ratings 2SD882 1 Absolute maximum ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) 60 V CBO E V Collector-emitter voltage (I = 0) 30 V CEO B V Collector-base voltage (I = 0) 5 V EBO C I Collector current 3 A C I Collector peak current (t < 5ms) 6 A CM P I Base current 1 A B I Base peak current (t < 5ms) 2 A BM P P Total dissipation at T = 25C 12.5 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 10 C/W thJ-case 2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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