2STA1943 STMicroelectronics

2STA1943 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V > -230V CEO Complementary to 2STC5200 Fast-switching speed Typical f = 30 MHz T Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA1943 2STA1943 TO-264 Tube December 2007 Rev 2 1/9 www.st.com 9Electrical ratings 2STA1943 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) -230 V CBO E V Collector-emitter voltage (I = 0) -230 V CEO B V Emitter-base voltage (I = 0) -5 V EBO C I Collector current -15 A C I Collector peak current -30 A CM P Total dissipation at T = 25C 150 W tot C T Storage temperature -55 to 150 C stg T Operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 0.83 C/W thJ-case 2/9