2SD2653KT146 ROHM

2SD2653K Transistors Low frequency amplifier 2SD2653K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 180mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol : FW ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V VCEO 12 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 2 A Collector current ICP 4 A PC 200 mW Power dissipation Junction temperature Tj 150 C Range of storage temperature Tstg 55~+150 C Single pulse, PW=1ms Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC=10A Collector-emitter breakdown voltage BVCEO 12 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A ICBO 100 nA VCB=15V Collector cutoff current Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 90 180 mV IC=1A, IB=50mA hFE 270 680 VCE=2V, IC=200mA DC current gain Transition frequency fT 360 MHz VCE=2V, IE=200mA, f=100MHz VCB=10V, IE=0A, f=1MHz Corrector output capacitance Cob 20 pF Pulsed Packaging specifications Package Taping Code T146 Basic ordering unit (pieces) 3000 Type 2SD2653K 0.4 0.15 ( ) 3 0~0.1 (2) (1) 0.8 0.95 0.95 1.9 1.1 2.92SD2653K Transistors Electrical characteristic curves 1000 1 1 VCE=2V IC/IB=20/1 Ta=100C Ta=25C Pulsed VCE=2V Pulsed Pulsed Ta=25C Ta=25C Ta=40C 0.1 0.1 Ta=100C Ta=40C 100 IC/IB=50/1 0.01 0.01 IC/IB=20/1 IC/IB=10/1 0.001 0.001 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.2 Base-emitter saturation voltage Fig.3 Collector-emitter saturation voltage vs. collector current vs. collector current vs. collector current 10 1000 1000 Ta=25C VCE=2V Ta=25C VCE=5V Pulsed VCE=2V f=100MHz f=100MHz 1 tstg 100 Ta=100C Ta=25C 0.1 100 Ta=40C 10 tdon 0.01 tf tr 0.001 1 10 0 0.5 1 1.5 0.001 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time vs. emitter current characteristics 1000 10 Ta=25C Ta=25C IC=0A Single Pulsed f=1MHz 1ms Cib 100 1 10ms PW=100ms DC Operation Cob 10 0.1 1 0.01 0.1 1 10 100 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB V) ( COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO BASE VOLTAGE : VCB V) ( Fig.7 Collector output capacitance Fig.8 Safe Operating Area vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO EMITTER TRANSITION FREQUENCY : fT (MHz) SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)