X-On Electronics has gained recognition as a prominent supplier of 2SD2673TL bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SD2673TL bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SD2673TL ROHM

Hot 2SD2673TL electronic component of ROHM
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See Product Specifications
Part No.2SD2673TL
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 3 A 200MHz 1 W Surface Mount TSMT3
Datasheet: 2SD2673TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

161: USD 0.2567 ea
Line Total: USD 41.33

Availability - 2353
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 161  Multiples: 1
Pack Size: 1
Availability Price Quantity
2896 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6612
10 : USD 0.5255
100 : USD 0.4025
500 : USD 0.3507
1000 : USD 0.3071
3000 : USD 0.2783
6000 : USD 0.2714
9000 : USD 0.2622
24000 : USD 0.2599

2353 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 161
Multiples : 1
161 : USD 0.2567
200 : USD 0.2552
500 : USD 0.2162
1000 : USD 0.2032
2000 : USD 0.2015

1610 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 229
Multiples : 1
229 : USD 0.4649
250 : USD 0.4463
500 : USD 0.4302
1000 : USD 0.4161

2910 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 229
Multiples : 1
229 : USD 0.4025

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2SD2673TL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD2673TL and other electronic components in the Bipolar Transistors - BJT category and beyond.

2SD2673 General purpose amplification( 30V , 3A ) Datasheet llOutline SOT-346T Parameter Value SC-96 V 30V CEO I 3A C TSMT3 llFeatures llInner circuit 1)A collector current is large. (3A) 2)V :max.250mV CE(sat) at I =1.5A/I =30mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-346T 2SD2673 2928 TL 180 8 3000 YZ (TSMT3) www.rohm.com 1/6 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. 2SD2673 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 3 A C Collector current *1 I 6 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E I Collector cut-off current V = 30V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 1.5A, I = 30mA - 120 250 mV CE(sat) C B h DC current gain V = 2V, I = 200mA 270 - 680 - FE CE C V = 2V, I = -200mA, CE E Transition frequency f - 200 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 40 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each Terminal Mounted on a Reference Land *3 Mounted on a ceramic board.(25250.8mm) www.rohm.com 2/6 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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