Product Information

BAT54AHMFHT116

BAT54AHMFHT116 electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4541 ea
Line Total: USD 0.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0363
9000 : USD 0.0287
24000 : USD 0.0252
45000 : USD 0.0228

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Maximum Operating Temperature
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

Schottky Barrier Diode BAT54AHMFH Datasheet AEC-Q101 Qualified Application Dimensions (Unit : mm) Land Size Figure (Unit : mm) Small current rectification Features 5C 1) Small power mold type SOT-23 (SOT-23) Structure (3) 2) High reliability (1) Cathode ROHM : SSD3 (2) Cathode Low V 3) F JEDEC : SOT-23 (3) Anode JEITA : - (1) (2) Construction Taping Dimensions (Unit : mm) Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 30 V RM Reverse voltage V Direct reverse voltage 30 V R I Direct forward current, Per diode 200 Forward current mA F I t 1s, Duty=0.5, Per diode 300 Repetitive peak forward current mA FRM 60Hz half sin wave, one cycle, Non-repetitive forward surge current I 600 mA FSM Non-repetitive at T =25C, Per diode a T - 150 Junction temperature C j T - Storage temperature 55 to 150 C stg Electrical Characteristics (T = 25C) a Parameter Symbol Conditions Min. Typ. Max. Unit I =0.1mA V - - 240 mV F F1 I =1mA V - - 320 mV F2 F Forward voltage V I =10mA - - 400 mV F3 F V I =30mA - - 500 mV F4 F V I =100mA - - 800 mV F5 F I V =25V Reverse current -- 2 A R R I =I =10mA, R =50, I =1mA Reverse recovery time t - - 50 ns F R L rr rr f=1MHz, V =1V Capacitance between terminals C - - 12 pF R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.08 - Rev.A 1/3 Not Recommended for New DesignsData Sheet BAT54AHMFH Electrical Characteristic Curves 1000 10000 T = 150 C j 1000 T = 150 C j 100 100 T = 75 C j T = 125 C j 10 10 T = 125 C T = 25 C j j 1 T = 75 C j 1 0.1 T = 25 C T = 25 C j j 0.01 0.1 T = 25 C j 0.001 0.01 0.0001 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 100 I FSM 1cyc I FSM 8.3 8.3 ms ms time 1cyc T =25C a 10 10 T =25C a 1 1 0.1 0.1 110 100 110 100 NUMBER OF CYCLES TIME : t (ms) I -CYCLE CHARACTERISTICS I -t CHARACTERISTICS FSM FSM www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.08 - Rev.A 2/3 Not Recommended for New Designs PEAK SURGE FORWARD CURRENT : I (mA) F FORWARD CURRENT : I (A) FSM PEAK SURGE REVERSE CURRENT : I ( A) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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