BAV170HMFHT116 ROHM

BAV170HMFH Switching Diode (Low leakage ) (AEC-Q101 qualified) Data sheet Outline V 90 V RM I 500 mA FM I 215 mA F I 4000 mA FSM Features Inner Circuit High reliability Small mold type Low I R Application Packaging Specifications Packing Embossed Tape General switching Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Epitaxial planar Taping Code T116 Marking D9Z (T = 25C) Absolute Maximum Ratings a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V - 90 V RM V Reverse voltage - 80 V R P Power dissipation Ta25 250 mW D I Repetitive peak reverse forward current Per diode 500 mA FM Peak forward surge current I Per diode, t=1s 4000 mA FSM Per diode 215 mA I Forward current F Per device 125 mA T Junction temperature - 150 j T Storage temperature - -65 150 stg Cautionstatic electricity www.rohm.com 1/5 2017 ROHM Co., Ltd. All rights reserved. 2018/11/29 Rev.002 Not Recommended for New DesignsBAV170HMFH Data sheet Characteristics (Tj=25C unless otherwise noted, Per diode) Parameter Symbol Conditions Min. Typ. Max. Unit I =1mA - - 0.90 V F I =10mA - - 1.00 V F V Forward voltage F I =50mA - - 1.10 V F I =150mA - - 1.25 V F V =75V T=25 - - 5.0 nA R j I Reverse current V =75V T=150 R - - 80 nA R j - - - - A C V =0V f=1.0MHz Capacitance between terminals t - 2.0 - pF R t I =I =10mA R =100 I =1mA Reverse recovery time - - 3.0 s rr F R L rr www.rohm.com 2/5 2017 ROHM Co., Ltd. All rights reserved. 2018/11/29 Rev.002 Not Recommended for New Designs