BAW56T116 ROHM

BAW56T116 electronic component of ROHM
BAW56T116 ROHM
BAW56T116 Diodes - General Purpose, Power, Switching
BAW56T116  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BAW56T116 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAW56T116 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. BAW56T116
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SWITCH HI SPEED 85V
Datasheet: BAW56T116 Datasheet (PDF)
Price (USD)
273: USD 0.1573 ea
Line Total: USD 42.94 
Availability : 0
  
QtyUnit Price
273$ 0.1573

Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0659
222000$ 0.0583


Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 273
Multiples : 1
QtyUnit Price
273$ 0.1573

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAW56T116 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAW56T116 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV70 / BAW56 / BAV99 Diodes Switching diode BAV70 / BAW56 / BAV99 This product is available only outside of Japan. z External dimensions (Unit : mm) z Application Ultra high speed switching 2.90.2 +0.2 0.95 0.1 1.90.2 z Features 0.450.1 0.95 0.95 1) Small surface mounting type. (SSD3) (1) (2) 2) High speed. (trr=1.5ns Typ.) 0~0.1 3) Four types of circuit configurations are available. 0.2Min. (3) +0.1 0.15 +0.1 0.69 0.4 0.05 z Construction Silicon epitaxial planar Each lead has same dimensions z Marking (Type No.) Product name Type No. BAV70 RA4 BAW56 RA1 BAV99 RA7 (Ex.) BAV70 z Equivalent circuits BAV99 BAV70 BAW56 1/3 +0.2 1.3 0.1 2.40.2 RA4BAV70 / BAW56 / BAV99 Diodes z Absolute maximum ratings (Ta=25C) Peak Mean Surge Peak DC Power Storage Junction forward rectifying current reverse reverse dissipation temperature temperature P / N Type Type current current (1s) voltage voltage (TOTAL) Tj (C) IFM (mA) IF (mA) Isurge (A) VRM (V) VR (V) Pd (mW) Tstg (C) BAV70 75 70 450 215 4 150 55 to +150 N 300 BAW56 85 70 450 215 4 150 55 to +150 P 225 BAV99 85 75 450 215 4 150 55 to +150 N 300 z Electrical characteristics (Ta=25C) Forward voltage Reverse current Capacitance between terminals Reverse recovery time Type Cond. Cond. Cond. Cond. VF (V) IR (A) CT (pF) trr (ns) Max. Max. Max. Max. IF (mA) VR (V) VR (V) f (MHz) VR (V) IF (mA) BAV70 1.25 150 2.5 70 1.5 0 1 4 10 10 BAW56 1.25 150 1.0 75 2.0 0 1 4 10 10 BAV99 1.25 150 1.0 75 1.5 0 1 4 10 10 z Electrical characteristic curves (Ta=25C) 125 50 1000 Ta=100C 20 100 100 75C 10 Ta=85C 50C 50C 5 25C 75 10 0C 25C 30C 2 0C 50 1 1 25C 0.5 25 0.1 0.2 0 0.1 0.01 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 20 30 40 50 0 AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Power attenuation curve Fig.2 Forward characteristics Fig.3 Reverse characteristics (P Type) (P Type) 50 f=1MHz 1000 Ta=100C 20 4 75C 100 10 Ta=85C 50C 50C 5 25C 0C 10 25C 30C 2 2 0C 1 1 P Type 25C 0.5 0.1 N Type 0.2 0.1 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80 02 4 6 8 1012 14 16 18 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics Fig.5 Reverse characteristics Fig.6 Capacitance between (N Type) (N Type) terminals characteristics 2/3 FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / Pd Max. (%) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) REVERSE CURRENT : IR (nA) CAPACITANCE BETWEEN TERMINALS : CT (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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