Product Information

BC848BHZGT116

BC848BHZGT116 electronic component of ROHM

Datasheet
Bipolar Transistors - BJT NPN SOT-23 0.1A 200 to 450hFE 30V
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1748 ea
Line Total: USD 0.17

9324 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9245 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.1748
10 : USD 0.1219
100 : USD 0.0552
1000 : USD 0.0333
3000 : USD 0.0287
24000 : USD 0.0241
45000 : USD 0.0207
99000 : USD 0.0195

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

BC848B HZG Datasheet NPN General purpose transistor AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 30V CEO I 100mA C SST3 llFeatures llInner circuit 1)BV minimum is 30V (I =1mA) CEO C 2)Complements the BC858B HZG llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC848B HZG 2924 T116 180 8 3000 G1K (SST3) www.rohm.com 1/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. BC848B HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E V = 30V - - 100 nA CB Collector cut-off current I CBO V = 30V, T = 150 - - 5 A CB a V 1 I = 10mA, I = 0.5mA - - 250 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 100mA, I = 5mA - - 600 mV CE(sat) C B Base-emitter turn V V = 5V, I = 10mA 580 - 770 mV BE(on) CE C on voltage h DC current gain V = 5V, I = 2mA 200 - 450 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 3.0 - pF ob f = 1MHz V = 0.5V, I = 0A BE C C Input capacitance - 8.0 - F ib f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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