BC848BHZGT116 ROHM

BC848BHZGT116 electronic component of ROHM
BC848BHZGT116 ROHM
BC848BHZGT116 Bipolar Transistors - BJT
BC848BHZGT116  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC848BHZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC848BHZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC848BHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SOT-23 0.1A 200 to 450hFE 30V
Datasheet: BC848BHZGT116 Datasheet (PDF)
Price (USD)
1: USD 0.18 ea
Line Total: USD 0.18 
Availability : 4023
  
Ship by Fri. 15 Aug to Tue. 19 Aug
QtyUnit Price
1$ 0.18
10$ 0.1075
100$ 0.0663
500$ 0.0449
1000$ 0.0374
3000$ 0.0341
6000$ 0.0275
9000$ 0.0231
24000$ 0.022

Availability 4023
Ship by Fri. 15 Aug to Tue. 19 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.18
10$ 0.1075
100$ 0.0663
500$ 0.0449
1000$ 0.0374
3000$ 0.0341
6000$ 0.0275
9000$ 0.0231
24000$ 0.022

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC848BHZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC848BHZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC848B HZG Datasheet NPN General purpose transistor AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 30V CEO I 100mA C SST3 llFeatures llInner circuit 1)BV minimum is 30V (I =1mA) CEO C 2)Complements the BC858B HZG llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC848B HZG 2924 T116 180 8 3000 G1K (SST3) www.rohm.com 1/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. BC848B HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E V = 30V - - 100 nA CB Collector cut-off current I CBO V = 30V, T = 150 - - 5 A CB a V 1 I = 10mA, I = 0.5mA - - 250 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 100mA, I = 5mA - - 600 mV CE(sat) C B Base-emitter turn V V = 5V, I = 10mA 580 - 770 mV BE(on) CE C on voltage h DC current gain V = 5V, I = 2mA 200 - 450 - FE CE C V = 5V, I = -20mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 3.0 - pF ob f = 1MHz V = 0.5V, I = 0A BE C C Input capacitance - 8.0 - F ib f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20160617 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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