BR24L02F-WE2 ROHM

BR24L02F-WE2 electronic component of ROHM
BR24L02F-WE2 ROHM
BR24L02F-WE2 EEPROM
BR24L02F-WE2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BR24L02F-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24L02F-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. BR24L02F-WE2
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM 2 WIRE SERIAL 2K (I2 C BUS TYPE)
Datasheet: BR24L02F-WE2 Datasheet (PDF)
Price (USD)
1: USD 0.3625 ea
Line Total: USD 0.36 
Availability : 1018
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.3625
10$ 0.3488
25$ 0.3192
100$ 0.3047
2500$ 0.2684
5000$ 0.2552

Availability 1018
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3625
10$ 0.3488
25$ 0.3192
100$ 0.3047
2500$ 0.2684
5000$ 0.2552

   
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RoHS - XON
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We are delighted to provide the BR24L02F-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24L02F-WE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) General Description 2 BR24Lxxx-W series is a serial EEPROM of I C BUS interface method Features Packages W(Typ.) x D(Typ.) x H(Max.) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port TSSOP-B8 SOP8 *1 1.8V to 5.5V single power source action most 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm suitable for battery use Page write mode useful for initial value write at factory shipment Highly reliable connection by Au pad and Au wire Auto erase and auto end function at data write SOP- J8 TSSOP-B8J Low current consumption *2 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 0.2mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Write mistake prevention function Write (write protect) function added Write mistake prevention function at low voltage SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm Data rewrite up to 1,000,000 times Data kept for 40 years Noise filter built in SCL / SDA terminal Shipment data all address FFh *1 BR24L02-W, BR24L16-W, BR24L32-W : 1.7V to 5.5V VSON008X2030 *2 BR24L32-W, BR24L64-W : 1.5mA 2.00mm x 3.00mm x 0.60mm Page write Number of 8Byte 16Byte 32Byte Pages BR24L04-W Product BR24L01A-W BR24L32-W BR24L08-W number BR24L02-W BR24L64-W BR24L16-W BR24Lxxx-W Series Bit Power source VSON008 Capacity Type SOP8 SOP-J8 SSOP-B8TSSOP-B8MSOP8 TSSOP-B8J format Voltage X2030 1Kbit 1288 BR24L01A-W 1.8V to 5.5V 2Kbit 2568 BR24L02-W 1.7V to 5.5V 4Kbit 5128 BR24L04-W 1.8V to 5.5V 8Kbit 1K8 BR24L08-W 1.8V to 5.5V 16Kbit 2K8 BR24L16-W 1.7V to 5.5V 32Kbit 4K8 BR24L32-W 1.7V to 5.5V 64Kbit 8K8 BR24L64-W 1.8V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100290-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/36 TSZ2211114001 21.AUG.2012 Rev.001Datasheet BR24Lxxx-W Series (1K 2K 4K 8K 16K 32K 64K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC 450 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 450 (SOP-J8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 300 (SSOP-B8) When using at Ta=25 or higher 3.0mW to be reduced per 1. Power Dissipation Pd 330 (TSSOP-B8) mW When using at Ta=25 or higher 3.3mW to be reduced per 1. 310 (TSSOP-B8J) When using at Ta=25 or higher 3.1mW to be reduced per 1. 310 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1. 300 (VSON008X2030) When using at Ta=25 or higher 3.0mW to be reduced per 1. Storage Temperature Tstg 65 to +125 Operating Temperature Topr 40 to +85 Terminal Voltage -0.3 to Vcc+1.0 V *1 Memory cell characteristics (Ta=25, Vcc=1.8V to 5.5V) Limits Parameter Unit Min. Typ. Max. *2 Number of data rewrite times 1,000,000 - - Times *2 Data hold years 40 - - Years Shipment data all address FFh *1 BR24L02/16/32-W : 1.7V to 5.5V *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage Vcc 1.8 to 5.5 *1 V Input voltage V 0 to Vcc IN *1 BR24L02/16/32-W : 1.7V to 5.5V *1 Electrical Characteristics (Unless otherwise specified, Ta=-40 to +85, VCC=1.8V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. *2 HIGH input voltage 1 VIH1 0.7Vcc - Vcc +1.0 V 2.5Vcc5.5V *2 LOW input voltage 1 VIL1 -0.3 - 0.3 Vcc V 2.5Vcc5.5V *2 HIGH input voltage 2 VIH2 0.8Vcc - Vcc +1.0 V 1.8Vcc2.5V *2 LOW input voltage 2 VIL2 -0.3 - 0.2 Vcc V 1.8Vcc2.5V *3 HIGH input voltage 3 VIH3 0.8Vcc - Vcc +1.0 V 1.7Vcc1.8V *4 HIGH input voltage 3 VIH3 0.9Vcc - Vcc +1.0 V 1.7Vcc1.8V *2 LOW input voltage 3 VIL3 -0.3 - 0.1 Vcc V 1.7Vcc1.8V LOW output voltage 1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V, (SDA) LOW output voltage 2 VOL2 - - 0.2 V IOL=0.7mA, 1.7VVcc2.5V, (SDA) Input leak current ILI -1 - 1 AVIN=0V to Vcc Output leak current ILO -1 - 1 AVOUT=0V to Vcc, (SDA) *5 2.0 Vcc=5.5V,fSCL=400kHz, tWR=5ms, ICC1 - - mA *6 Current consumption at Byte write, Page write 3.0 action Vcc=5.5V,fSCL=400kHz ICC2 - - 0.5 mA Random read, current read,sequential read Vcc=5.5V, SDASCL=Vcc Standby current ISB - - 2.0 A A0, A1, A2=GND, WP=GND *1 BR24L02/16/32-W : 1.7V to 5.5V, *2 BR24L16/32-W, *3 BR24L02/16-W, *4 BR24L32-W *5 BR24L01A/02/04/08/16-W, *6 BR24L32/64-W www.rohm.com TSZ02201-0R2R0G1000290-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/36 TSZ2211115001 21.AUG.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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