Product Information

BR34E02FVT-3E2

BR34E02FVT-3E2 electronic component of ROHM

Datasheet
EEPROM I2C BUS(2-Wre) 2K TSSOP-B8 EEPROM

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.543 ea
Line Total: USD 0.54

928 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
807 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.4577
10 : USD 0.4255
100 : USD 0.3852
500 : USD 0.3852
1000 : USD 0.3668
3000 : USD 0.3335
9000 : USD 0.3323
24000 : USD 0.3255
45000 : USD 0.3128

     
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Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34E02-3 General Description BR34E02-3 is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features Packages W(Typ) x D(Typ) x H(Max) 2568 bit Architecture Serial EEPROM Wide Operating Voltage Range: 1.7V to 5.5V Two-Wire Serial Interface Self-Timed Erase and Write Cycle Page Write Function (16byte) Write Protect Mode Settable Reversible Write Protect Function : 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh Low Power consumption TSSOP-B8 Write (at 1.7V) : 0.4mA (typ) 3.00mm x 6.40mm x 1.20mm Read (at 1.7V) : 0.1mA (typ) Standby (at 1.7V) : 0.1A (typ) Prevention of Write Mistake Write Protect Feature (WP pin) Prevention of Write Mistake at Low Voltage High Reliability Fine Pattern CMOS Technology More than 1 million write cycles More than 40 years data retention Noise Reduction Filtered Inputs in SCL / SDA Initial delivery state FFh VSON008X2030 2.00mm x 3.00mm x 0.60mm BR34E02-3 Power Source Capacity Bit Format Type Package Voltage BR34E02FVT-3 TSSOP-B8 2Kbit 256x8 1.7V to 5.5V BR34E02NUX-3 VSON008X2030 Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V Derate by 3.3mW/ C when operating above Ta=25 C 330 (TSSOP-B8) Power Dissipation Pd mW Derate by 3.0mW/ C when operating above Ta=25 C 300 (VSON008X2030) Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +85 Input Voltage / Output - -0.3 to 10.0 V Voltage (A0) Input Voltage / Output - -0.3 to VCC+1.0 V Voltage (others) Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Memory Cell Characteristics (Ta=25, V =1.7V to 5.5V) CC Limit Parameter Unit Min Typ Max (1) Write / Erase Cycle 1,000,000 - - Times (1) Data Retention 40 - - Years (1) Not 100% TESTED Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100520-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/30 TSZ2211114001 31.May.2013 Rev.003DatasheetDatasheet BR34E02-3 Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage V 1.7 to 5.5 V CC Input Voltage V 0 to V V IN CC DC Characteristics (Unless otherwise specified Ta=-40 to +85, V =1.7V to 5.5V) CC Limit Parameter Symbol Unit Test Conditions Min Typ Max Input High Voltage V 0.7 VCC - Vcc+1.0 V IH Input Low Voltage V -0.3 - 0.3 VCC V IL Output Low Voltage 1 V - - 0.4 V I =2.1mA, 2.5VV 5.5V(SDA) OL1 OL CC Output Low Voltage 2 V - - 0.2 V I =0.7mA, 1.7VV 2.5V(SDA) OL2 OL CC Input Leakage Current 1 I -1 - 1 A V =0V to V (A0, A1, A2, SCL) LI1 IN CC Input Leakage Current 2 I -1 - 15 A V =0V to V (WP) LI2 IN CC Input Leakage Current 3 I -1 - 20 A V =V (A0) LI3 IN HV Output Leakage Current I -1 - 1 A V =0V to V LO OUT CC V =5.5V, f =400kHz, t =5ms CC SCL WR Byte Write Supply Current (Write) I - - 2.0 mA CC1 Page Write Write Protect V =5.5V, f =400kHz CC SCL Random Read Supply Current (Read) I - - 0.5 mA CC2 Current Read Sequential Read V =5.5V, SDA, SCL= V CC CC Standby Current I - - 2.0 A SB A0, A1, A2=GND, WP=GND A0 HV Voltage V 7 - 10 V V -V 4.8V HV HV CC AC Characteristics (Unless otherwise specified Ta=-40 to +85, V =1.7V to 5.5V) CC Limit Parameter Symbol Unit Min Typ Max Clock Frequency f - - 400 kHz SCL Data Clock High Period t 0.6 - - s HIGH Data Clock Low Period t 1.2 - - s LOW (1) SDA and SCL Rise Time t - - 0.3 s R (1) SDA and SCL Fall Time t - - 0.3 s F Start Condition Hold Time t 0.6 - - s HD:STA Start Condition Setup Time t 0.6 - - s SU:STA Input Data Hold Time t 0 - - ns HD:DAT Input Data Setup Time t 100 - - ns SU:DAT Output Data Delay Time t 0.1 - 0.9 s PD Output Data Hold Time t 0.1 - - s DH Stop Condition Setup Time t 0.6 - - s SU:STO Bus Free Time t 1.2 - - s BUF Write Cycle Time t - - 5 ms WR Noise Spike Width t - - 0.1 s I (SDA and SCL) WP Hold Time t 0 - - s HD:WP WP Setup Time t 0.1 - - s SU:WP WP High Period t 1.0 - - s HIGH:WP (1) Not 100% TESTED www.rohm.com TSZ02201-0R2R0G100520-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/30 TSZ2211115001 31.May.2013 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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