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BR34E02NUX-WTR

BR34E02NUX-WTR electronic component of ROHM
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See Product Specifications
Part No. BR34E02NUX-WTR
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM EEPROM Serial-2Wire 2Kb
Datasheet: BR34E02NUX-WTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6885 ea
Line Total: USD 0.69

5093 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4981 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5566
10 : USD 0.5106
100 : USD 0.4657
500 : USD 0.4588
1000 : USD 0.4428
2000 : USD 0.4209
4000 : USD 0.368

     
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Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34E02-W General Description BR34E02-W is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features Packages W(Typ.) x D(Typ.) x H(Max.) 2568 bit architecture serial EEPROM Wide operating voltage range: 1.7V-3.6V Two-wire serial interface High reliability connection using Au pads and Au wires Self-Timed Erase and Write Cycle Page Write Function (16byte) TSSOP-B8 Write Protect Mode 3.00mm x 6.40mm x 1.20mm Settable Reversible Write Protect Function : 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh Low Power consumption Write (at 1.7V ) : 0.4mA (typ.) Read (at 1.7V ) : 0.1mA(typ.) Standby (at 1.7V ) : 0.1A (typ.) DATA security VSON008X2030 2.00mm x 3.00mm x 0.60mm Write protect feature (WP pin) Inhibit to WRITE at low Vcc High reliability fine pattern CMOS technology Rewriting possible up to 1,000,000 times Data retention: 40 years Noise reduction Filtered inputs in SCL / SDA Initial data FFh at all addresses BR34E02-W Capacity Bit format Type Power Source Voltage TSSOP-B8 VSON008X2030 2Kbit 256 x 8 BR34E02-W 1.7V to 3.6V Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remarks Supply Voltage Vcc -0.3 to +6.5 V Reduce by 3.3mW/C over 25C 330 (TSSOP-B8) Power Dissipation Pd mW Reduce by 3.0mW/C over 25C 300 (VSON008X2030) Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +85 Terminal Voltage (A0) - -0.3 to 10.0 V Terminal Voltage (etcetera) - -0.3 to Vcc+0.3 V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100370-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 27.Aug.2012 Rev.001Datasheet BR34E02-W Memory Cell Characteristics(Ta=25, Vcc=1.7V to 3.6V) Specification Parameter Unit Min. Typ. Max. *1 Write / Erase Cycle 1,000,000 - - Times *1 Data Retention 40 - - Years *1Not 100 TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage Vcc 1.7 to 3.6 V Input Voltage VIN 0 to Vcc V Electrical Characteristics DC(Unless otherwise specified Ta=-40 to +85, Vcc=1.7V to 3.6V) Specification Parameter Symbol Unit Test Condition Min. Typ. Max. Input Voltage VIH 0.7Vcc - Vcc+0.3 V Input Voltage VIL - - 0.3Vcc V Output Voltage 1 VOL1 -0.3 - 0.4 V IOL=2.1mA, 2.5VVcc3.6V(SDA) Output Voltage 2 VOL2 - - 0.2 V IOL=0.7mA, 1.7VVcc2.5V(SDA) Input Leakage Current 1 ILI1 -1 - 1 A VIN=0V to Vcc(A0,A1,A2,SCL) Input Leakage Current 2 ILI2 -1 - 15 A VIN=0V to Vcc(WP) Input Leakage Current 3 ILI3 -1 - 20 A VIN=VHV(A0) Output Leakage Current ILO -1 - 1 A VOUT=0V to Vcc Vcc=1.7V, fSCL=100kHz, tWR=5ms Byte Write ICC1 - - 1.0 mA Page Write Write Protect Vcc =3.6V, fSCL=100kHz, tWR=5ms Byte Write Operating Current ICC2 - - 3.0 mA Page Write Write Protect Vcc =3.6V, fSCL=100kHz Random Read ICC3 - - 0.5 mA Current Read Sequential Read Vcc =3.6V, SDA,SCL= Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND, WP=GND A0 HV Voltage VHV 7 - 10 V VHV-Vcc4.8V AC(Unless otherwise specified Ta=-40 to +85, Vcc =1.7V to 3.6V) FAST-MODE STANDARD-MODE Parameter Symbol 2.5VVcc5.5V 1.7VVcc5.5V Unit Min. Typ. Max. Min. Typ. Max. Clock Frequency fSCL - - 400 - - 100 kHz Data Clock High Period tHIGH 0.6 - - 4.0 - - s Data Clock Low Period tLOW 1.2 - - 4.7 - - s *1 SDA and SCL Rise Time tR - - 0.3 - - 1.0 s *1 SDA and SCL Fall Time tF - - 0.3 - - 0.3 s Start Condition Hold Time tHD:STA 0.6 - - 4.0 - - s Start Condition Setup Time tSU:STA 0.6 - - 4.7 - - s Input Data Hold Time tHD:DAT 0 - - 0 - - ns Input Data Setup Time tSU:DAT 100 - - 250 - - ns Output Data Delay Time tPD 0.1 - 0.9 0.1 - 3.5 s Output Data Hold Time tDH 0.1 - - 0.1 - - s Stop Condition Setup Time tSU:STO 0.6 - - 4.0 - - s Bus Free Time tBUF 1.2 - - 4.7 - - s Write Cycle Time tWR - - 5 - - 5 ms Noise Spike Width (SDA tI - - 0.1 - - 0.1 s and SCL) WP Hold Time tHDWP 0 - - 0 - - ns WP Setup Time tSUWP 0.1 - - 0.1 - - s WP High Period tHIGHWP 1.0 - - 1.0 - - s *1Not 100 TESTED www.rohm.com TSZ02201-0R2R0G100370-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 TSZ2211115001 27.Aug.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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