Product Information

BR35H128FJ-WCE2

BR35H128FJ-WCE2 electronic component of ROHM

Datasheet
EEPROM EEPROM Serial-SPI 128K-Bit 16K x 8 3.3V/5V 8-Pin SOP-J T/R

Manufacturer: ROHM
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Price (USD)

2500: USD 1.5632 ea
Line Total: USD 3908

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.2995
5000 : USD 1.2995
10000 : USD 1.2995
25000 : USD 1.265

     
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Datasheet Serial EEPROM Series Automotive EEPROM 125C Operation SPI BUS EEPROM BR35Hxxx-WC (16K 32K 64K 128K) General Description BR35Hxxx-WC is a SPI BUS interface method serial EEPROM. Features Packag es W(Typ) x D(Typ) x H(Max) High Speed Clock Operation up to 5MHz(Max) 2.5V to 5.5V Single Power Source Operation most suitable for Battery use. Page Write Mode Useful for Initial Value at Factory Shipment. Highly Reliable Connection by Au Pad and Au Wire. For SPI Bus Interface (CPOL, CPHA)=(0,0),(1,1) Auto Erase and Auto End Function at Data Rewrite. Low Operating Current At Write Operation (5V): 0.6mA(Typ) TSSOP-B8 At Read Operation (5V): 1.3mA(Typ) SOP8 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm At Standby Operation (5V): 0.1A(Typ) Address Auto Increment Function at Read Operation. Write Mistake Prevention Function Write Prohibition at Power on. Write Prohibition by Command Code (WRDI) Write Mistake Prevention Function at Low Voltage. Data at Shipment Memory Array: FFh. Data Retention : 50 Years(Ta125C) Endurance : 300,000 Cycles(Ta=125C) AEC-Q100 Qualified SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm Page write Number of pages 32Byte 64Byte BR35H160-WC Product Number BR35H320-WC BR35H128-WC BR35H640-WC BR35Hxxx-WC Supply Capacity Bit Format Product Name MSOP8 TSSOP-B8 SOP8 SOP-J8 Voltage 16Kbit 2K8 BR35H160-WC 2.5V to 5.5V 32Kbit 4K8 BR35H320-WC 2.5V to 5.5V 64Kbit 8K8 BR35H640-WC 2.5V to 5.5V - 128Kbit 16Kx8 BR35H128-WC 2.5V to 5.5V - - Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100170-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/27 TSZ2211114001 22.Nov.2013 Rev.003Datasheet BR35Hxxx-WC (16K 32K 64k 128k) Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Remarks Impressed Voltage Vcc -0.3 to +6.5 V When using at Ta=25C or higher, 4.5mW to be reduced per 1C 0.56(SOP8) When using at Ta=25C or higher, 4.5mW to be reduced per 1C Permissible 0.56(SOP-J8) Pd W Dissipation 0.41(TSSOP-B8) When using at Ta=25C or higher, 3.3mW to be reduced per 1C When using at Ta=25C or higher, 3.1mW to be reduced per 1C 0.38(MSOP8) Storage Tstg -65 to +150 C Temperature Range Operating Topr -40 to +125 C Temperature Range Terminal Voltage - -0.3 to Vcc +0.3 V Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings Memory Cell Characteristics (Vcc=2.5V to 5.5V) Limits Parameter Unit Condition Min Typ Max 1,000,000 - - TimesTa85C (Note1) Endurance 500,000 - - TimesTa105C 300,000 - - TimesTa125C 100 - - YearsTa25C (Note1) Data Retention 60 - - YearsTa105C 50 - - YearsTa125C (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage Vcc 2.5 to 5.5 V Input Voltage V 0 to Vcc IN Input / Output Capacitance (Ta=25C, frequency=5MHz) Parameter Symbol Min Max Unit Conditions (Note1) Input Capacitance C 8 V =GND IN IN pF (Note1) Output Capacitance C 8 V =GND OUT OUT (Note1) Not 100% TESTED Electrical Characteristics (Unless otherwise specified, Ta=-40C to +125C, Vcc=2.5V to 5.5V) Limits Parameter Symbol Unit Conditions Min Typ Max H Input Voltage V 0.7xVcc Vcc+0.3 V 2.5V Vcc5.5V IH L Input Voltage V -0.3 0.3xVcc V 2.5V Vcc5.5V IL L Output Voltage V 0 0.4 V I =2.1mA OL OL H Output Voltage V Vcc-0.5 Vcc V I =-0.4mA OH OH Input Leakage Current I -10 10 AV =0V to Vcc LI IN Output Leakage Current I -10 10 AV =0V to Vcc, CSB=Vcc LO OUT (Note1) Vcc=2.5V, f =5MHz, t =5ms, SCK E/W 2.0 I mA V /V =0.9Vcc/0.1Vcc, SO=OPEN CC1 IH IL (Note2) 2.5 Operating Current Byte Write, Page Write (Note1) (Write) Vcc=5.5V, f =5MHz, t =5ms, SCK E/W 3.0 I mA V /V =0.9Vcc/0.1Vcc, SO=OPEN CC2 IH IL (Note2) 5.5 Byte Write, Page Write Vcc=2.5V, f =5MHz, V /V =0.9Vcc/0.1Vcc SCK IH IL I 1.5 mA CC3 Operating Current SO=OPEN, Read, Read Status Register (Read) Vcc=5.5V, f =5MHz, V /V =0.9Vcc/0.1Vcc SCK IH IL I 2.0 mA CC4 SO=OPEN, Read, Read Status Register Vcc=5.5V Standby Current I 10 A SB CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN (Note1) BR35H160/320-WC (Note2) BR35H640/128-WC www.rohm.com TSZ02201-0R1R0G100170-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/27 TSZ2211115001 22.Nov.2013 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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