Product Information

BR93H46RF-2CE2

BR93H46RF-2CE2 electronic component of ROHM

Datasheet
EEPROM (3-Wire) 2MHz 1Kbit 2.5-5.5V
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6672 ea
Line Total: USD 0.67

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.3818
100 : USD 0.345
500 : USD 0.3393
1000 : USD 0.3301
2500 : USD 0.299
10000 : USD 0.2909
25000 : USD 0.2841
50000 : USD 0.276

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Packaging
Brand
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H46-2C GeneralDescription Package (Typ) (Typ) (Max) BR93H46-2C is a serial EEPROM of serial 3-line MSOP8 2.90mm x 4.00mm x 0.90mm interface method TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm Features Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage TSSOP-B8 MSOP8 Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 High-Reliability using ROHM Original Double-Cell structure More than 50 years data retention (Ta125) More than 300,000 write cycles (Ta125) Data set to FFFFh on all addresses at shipment SOP-J8 SOP8 AEC-Q100 Qualified BR93H46-2C MSOP8 TSSOP-B8 SOP8 SOP-J8 Package Type Product Name Capacity Bit Format Supply Voltage RFVM RFVT RF RFJ 1Kbit 6416 BR93H46-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100010-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 16.Feb.2016 Rev.003DatasheetDatasheet BR93H46-2C Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Supply Voltage V -0.3 to +6.5 V CC (1) 380 (MSOP8) (2) 410 (TSSOP-B8) Permissible Dissipation P mW d (3) 560 (SOP8) (4) 560 (SOP-J8) Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (5) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (5) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (5) Not 100% TESTED Recommended Operating Conditions Unit Parameter Symbol Limits Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100010-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 16.Feb.2016 Rev.003 TSZ2211115001

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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