Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM(3-Wire) BR93Hxx-WC (2K 4K 8K 16K) General Description BR93Hxx-WC is a serial EEPROM of serial 3-line interface method. Features Packages W(Typ.) x D(Typ.) x H(Max.) Conforming to Microwire BUS Withstands electrostatic voltage 8kV, (HBM method typ.,except BR93H66RFVM-WC) Wide temperature range -40 to +125 Same package line up and same pin configuration 2.7V to 5.5V single supply voltage operation Address auto increment function at read operation Write mistake prevention function Write prohibition at power on SOP8 SOP-J8 Write prohibition by command code 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Write mistake prevention circuit at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption At write operation (at 5V) : 0.6mA (Typ.) At read operation (at 5V) : 0.6mA (Typ.) At standby condition (at 5V) : 0.1A(Typ.)(CMOS input) MSOP8 Built-in noise filter CS, SK, DI terminals 2.90mm x 4.00mm x 0.90mm High reliability by ROHM original Double-Cell structure Data retention for 20 years (Ta125) Endurance up to 300,000 times (Ta125) Data at shipment all address FFFFh AEC-Q100 Qualified BR93Hxx-WC Package type SOP8 SOP-J8 MSOP8 Power source Capacity Bit format Type RF RFJ RFVM voltage 2Kbit 12816 BR93H56-WC 2.7V to 5.5V 4Kbit 25616 BR93H66-WC 2.7V to 5.5V 8Kbit 51216 BR93H76-WC 2.7V to 5.5V 16Kbit 1K16 BR93H86-WC 2.7V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100160-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/27 TSZ2211114001 6.Nov.2013 Rev.002DatasheetDatasheet BR93Hxx-WC (2K 4K 8K 16K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Remarks Impressed voltage VCC -0.3 to +6.5 V When using at Ta=25 or higher, 4.5mW, to be reduced per 1. 0.56 (SOP8) When using at Ta=25 or higher, 4.5mW, to be reduced per 1. Permissible dissipation Pd 0.56 (SOP-J8) W When using at Ta=25 or higher, 3.1mW, to be reduced per 1. 0.38 (MSOP8) Storage temperature range Tstg -65 to +150 Operating temperature range Topr -40 to +125 Terminal voltage -0.3 to VCC+0.3 V Memory Cell Characteristics(VCC=2.7V to 5.5V) Limit Parameter Limit Limit Min. Typ. Max. 1,000,000 - - Times Ta85 *1 Endurance 500,000 - - Times Ta105 300,000 - - Times Ta125 40 - - Years Ta25 *1 Data retention 20 - - Years Ta125 *1Not 100 TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Power source voltage VCC 2.7 to 5.5 V Input voltage VIN 0 to VCC Electrical Characteristics(Unless otherwise specified, Ta=-40 to +125, VCC=2.7V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. L input voltage VIL -0.3 - 0.3x VCC V H input voltage VIH 0.7x VCC - VCC +0.3 V L output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0VVCC5.5V L output voltage 2 VOL2 0 - 0.2 V IOL=100A H output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0VVCC5.5V H output voltage 2 VOH2 VCC -0.2 - VCC V IOH=-100A Input leak current ILI -10 - 10 A VIN=0V to VCC Output leak current ILO -10 - 10 A VOUT=0V to VCC, CS=0V ICC1 - - 3.0 mA fSK=1.25MHz, tE/W=10ms (WRITE) Current consumption ICC2 - - 1.5 mA fSK=1.25MHz (READ) ICC3 - - 4.5 mA fSK=1.25MHz, tE/W=10ms (WRAL) Standby current ISB - 0.1 10 A CS=0V, DO=OPEN Operating Timing Characteristics (Unless otherwise specified, Ta=-40 to +125, VCC=2.7V to 5.5V) Parameter Symbol Min. Typ. Max. Unit SK frequency fSK - - 1.25 MHz SK H time tSKH 250 - - ns SK L time tSKL 250 - - ns CS L time tCS 200 - - ns CS setup time tCSS 200 - - ns DI setup time tDIS 100 - - ns CS hold time tCSH 0 - - ns DI hold time tDIH 100 - - ns Data 1 output delay time tPD1 - - 300 ns Data 0 output delay time tPD0 - - 300 ns Time from CS to output establishment tSV - - 200 ns Time from CS to High-Z tDF - - 200 ns Write cycle time tE/W - 7 10 ms Write cycle time(BR93H66RFVM-WC) tE/W - - 5 ms www.rohm.com TSZ02201-0R1R0G100160-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/27 TSZ2211115001 6.Nov.2013 Rev.002