Product Information

BR93H56RFVT-2CE2

BR93H56RFVT-2CE2 electronic component of ROHM

Datasheet
SERIAL EEPROM, 1.25MHZ, TSSOPB

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1992 ea
Line Total: USD 1.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.78
10 : USD 0.6242
25 : USD 0.5089
50 : USD 0.4896
100 : USD 0.4194
250 : USD 0.3827

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.3687
9000 : USD 0.3588
24000 : USD 0.35
45000 : USD 0.3388

     
Manufacturer
Product Category
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Interface Type
Memory Size
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Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
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Memory Case Style
No Of Pins
Product Range
Msl
Approval Category
Brand
Cnhts
Hts Code
Mxhts
Operating Supply Voltage
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Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H56-2C GeneralDescription Packages (Typ) (Typ) (Max) BR93H56-2C is a serial EEPROM of serial 3-line interface MSOP8 2.90mm x 4.00mm x 0.90mm method. TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm Features Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ. Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage Self-timed programming cycle TSSOP-B8 MSOP8 Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package: MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 High-Reliability using ROHM Original Double-Cell Structure More than 50 years data retention (Ta125) More than 300,000 write cycles (Ta125) Data set to FFFFh on all addresses at shipment AEC-Q100 Qualified SOP-J8 SOP8 BR93H56-2C MSOP8 TSSOP-B8 SOP8 SOP-J8 Package Type Product Name Capacity Bit Format Supply Voltage RFVM RFVT RF RFJ 2Kbit 12816 BR93H56-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100020-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 16.Feb.2016 Rev.003DatasheetDatasheet BR93H56-2C Absolute Maximum Ratings (Ta=25) Parameter Symbol Limit Unit Supply Voltage V -0.3 to +6.5 V CC (1) 380 (MSOP8) (2) 410 (TSSOP-B8) Permissible Dissipation Pd mW (3) 560 (SOP8) (4) 560 (SOP-J8) Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (5) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (5) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (5) Not 100% TESTED Recommended Operating Conditions Unit Parameter Symbol Limits Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100020-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 16.Feb.2016 Rev.003 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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