BR93H66RFVM-2CTR ROHM

Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H66-2C GeneralDescription Packages (Typ) (Typ) (Max) BR93H66-2C is a serial EEPROM of serial 3-line interface MSOP8 2.90mm x 4.00mm x 0.90mm method. TSSOP-B8 3.00mm x 6.40mm x 1.20mm SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm Features Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ) Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current MSOP8 TSSOP-B8 Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 High-Reliability using ROHM Original Double-Cell Structure More than 50 years data retention (Ta125) More than 300,000 write cycles (Ta125) Data set to FFFFh on all addresses at shipment AEC-Q100 Qualified SOP8 SOP-J8 BR93H66-2C MSOP8 TSSOP-B8 SOP8 SOP-J8 Package Type Product Name Capacity Bit Format Supply Voltage RFVM RFVT RF RFJ 4Kbit 25616 BR93H66-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100030-1-2 2015 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 01.Dec.2015 Rev.003DatasheetDatasheet BR93H66-2C Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Supply Voltage V -0.3 to +6.5 V CC (1) 380 (MSOP8) (2) 410 (TSSOP-B8) Permissible Dissipation Pd mW (3) 560 (SOP8) (4) 560 (SOP-J8) Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to VCC+0.3 V (1)When using at Ta=25 or higher, 3.1mW(*1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (5) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (5) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (5) Not 100% TESTED Recommended Action Conditions Unit Parameter Symbol Limits Supply Voltage VCC 2.5 to 5.5 V Input Voltage VIN 0 to VCC www.rohm.com TSZ02201-0R1R0G100030-1-2 2015 ROHM Co., Ltd. All rights reserved. 2/29 01.Dec.2015 Rev.003 TSZ2211115001