Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCB032GWZ-3 General Description 2 BRCB032GWZ-3 is a 32Kbit serial EEPROM of I C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features UCSP30L1 1.45mm x0.77mm x 0.33mm All Controls Available by 2 Ports of Serial Clock (SCL) and serial data (SDA) Other Devices than EEPROM can be Connected to the Same Port, Saving Microcontroller Port 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use 1MHz action is possible (1.7V to 5.5V) Up to 32 Byte in Page Write Mode Bit Format 4K x 8 Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake Write (Write Protect) Function Added Prevention of write mistake at low voltage More than 1 Million Write Cycles More than 40 Years Data Retention Noise Filter Built in SCL / SDA Terminal Initial Delivery State FFh BRCB032GWZ-3 Capacity Bit Format Type Power Source Voltage Package 32Kbit 4K8 BRCB032GWZ-3 1.6V to 5.5V UCSP30L1 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100660-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/26 TSZ2211114001 18.Mar.2014 Rev.001Datasheet BRCB032GWZ-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 0.22(UCSP30L1) W Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not below 1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (Note1) Write Cycles 1,000,000 - - Times (Note1) Data Retention 40 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7V Vcc5.5V IH1 (Note2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7V Vcc5.5V IL1 Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6V Vcc1.7V IH2 (Note2) Input Low Voltage2 V -0.3 - +0.2Vcc V 1.6V Vcc1.7V IL2 Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc5.5V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=5.5V, f =1MHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte Write, Page Write Vcc=5.5V, f =1MHz SCL Random Read, current Read, Sequential Supply Current (Read) I - - 2.0 mA CC2 Read WP=GND or Vcc Vcc=5.5V, SDASCL=Vcc Standby Current I - - 2.0 A SB WP=GND or Vcc, A2=GND or Vcc (Note2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100660-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/26 TSZ2211115001 18.Mar.2014 Rev.001