Product Information

BSM120C12P2C201

BSM120C12P2C201 electronic component of ROHM

Datasheet
Mosfet Array 2 N-Channel 1200V (1.2kV) 134A (Tc) 935W (Tc) Chassis Mount Module

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 563.4562 ea
Line Total: USD 563.46

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 337.365

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 563.4562
5 : USD 488.8879

0 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 426.972
12 : USD 424.603

     
Manufacturer
Product Category
Product
Vf - Forward Voltage
Vr - Reverse Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Technology
Hts Code
LoadingGif

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10 9 8 7 6 5 SiC Power Module BSM120C12P2C201 Datasheet Application Circuit diagram Motor drive 1 Converter 10 (N .C ) Photovoltaics, wind power generation. 9 8(N.C) 3,4 Features 5 6 7(N.C) 1) Low surge, low switching loss. 2 2) High-speed switching possible. *Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/10Datasheet BSM120C12P2C201 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS V 1200 Repetitive reverse voltage Clamp diode DSS Gate-source voltage() 22 V V D-S short GSS Gate-source voltage() 6 <300ns) V G - S Voltage (t D-S short 10 to 26 GSS surge surge I DC (T =60C) 134 D c 1 2 I 240 Drain current * DRM Pulse (T =60C) 1ms * c 2 I 360 Pulse (T =60C) 10us * DRM c I DC (T =60C ) V =18V 134 S c GS 1 2 I 240 A Source current * Pulse (Tc=60C) 1ms V =18V* SRM GS 2 I 360 Pulse (Tc=60C) 10us V =18V* SRM GS I DC (T =60C ) V =18V 134 F c GS 2 1 I 240 Pulse (Tc=60C) 1ms V =18V* Forward curent (clamp diode) * FRM GS 2 I 360 Pulse (Tc=60C) 10us V =18V* FRM GS 4 T =25C 935 Ptot W Total power disspation * c Max Junction Temperature T 175 jmax Junction temperature T C 40 to150 jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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