X-On Electronics has gained recognition as a prominent supplier of BSM080D12P2C008 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM080D12P2C008 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.
We are delighted to provide the BSM080D12P2C008 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM080D12P2C008 and other electronic components in the Discrete Semiconductor Modules category and beyond.
10 9 8 7 6 5 SiC Power Module BSM080D12P2C008 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 Photovoltaics, wind power generation. 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 *Do not connnect to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF- TAPPING www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/10Datasheet BSM080D12P2C008 Absolute maximum ratings (Tj = 25C) Parameter Symbol Conditions Limit Unit Drain-source voltage V 1200 G-S short DSS Gate-source voltage( ) 22 V D-S short V GSS Gate-source voltage( ) 6 G - S voltage (t <300ns) V D-S short 10 to 26 surge GSSsurge I DC(T =60C) 80 D c 1 Drain current * 2 I 160 Pulse (T =60C) 1ms* DRM c A I DC(T = 60C) V =18V 80 S c GS 1 Source current * I 160 Pulse (T =60C) 1ms V =18V SRM c GS 3 Ptot T =25C 600 W Total power disspation * c Max junction temperature T 175 jmax Junction temperature T C 40 to150 jop T Storage temperature 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable VGS waveform 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/10