10 9 8 7 6 5 SiC Power Module BSM080D12P2C008 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 Photovoltaics, wind power generation. 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 *Do not connnect to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF- TAPPING www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/10Datasheet BSM080D12P2C008 Absolute maximum ratings (Tj = 25C) Parameter Symbol Conditions Limit Unit Drain-source voltage V 1200 G-S short DSS Gate-source voltage( ) 22 V D-S short V GSS Gate-source voltage( ) 6 G - S voltage (t <300ns) V D-S short 10 to 26 surge GSSsurge I DC(T =60C) 80 D c 1 Drain current * 2 I 160 Pulse (T =60C) 1ms* DRM c A I DC(T = 60C) V =18V 80 S c GS 1 Source current * I 160 Pulse (T =60C) 1ms V =18V SRM c GS 3 Ptot T =25C 600 W Total power disspation * c Max junction temperature T 175 jmax Junction temperature T C 40 to150 jop T Storage temperature 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable VGS waveform 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/10