Product Information

BU9847GUL-WE2

BU9847GUL-WE2 electronic component of ROHM

Datasheet
EEPROM I2C BUS(2-Wre) 4K VCSP50L1 EEPROM

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0395 ea
Line Total: USD 1.04

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.5048
6000 : USD 0.4943
9000 : USD 0.4768
24000 : USD 0.4664

     
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RoHS - XON
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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BU9847GUL-W (4Kbit) General Description 2 BU9847GUL-W series is a serial EEPROM of I C BUS interface method. 1.7V single power source action and actions available at 400kHz. Features Package W(Typ.) x D(Typ.) x H(Max.) 2 Completely conforming to the world standard I C BUS. All controls VCSP50L1:1.95mm x 1.06mm x 0.55mm available by 2 ports of serial clock (SCL) and serial data(SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port. Actions available at 400kHz clock (1.7V to 5.5V) 1.7V to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at factory shipment. Auto erase and auto end function at data rewrite. Low current consumption At write action (5V) : 1.2mA (Typ.) At read action (5V) : 0.2mA (Typ.) At standby action (5V) : 0.1A (Typ.) Write mistake prevention function Write (write protect) function added. Write mistake prevention function at low voltage. Data rewrite up to 1,000,000times. Data kept for 40 years. Noise filter built in SCL / SDA terminal Shipment data all address FFh. Page Write Number of pages 16Byte Product number BU9847GUL-W BU9847GUL-W Capacity Bit format Type Power source voltage VCSP50L1 4Kbit 5128 BU9847GUL-W 1.7V to 5.5V Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Impressed voltage Vcc -0.3 to +6.5 V Permissible dissipation Pd 220 mW When using at Ta=25 or higher, 2.2mW to be reduced per 1 Storage temperature range Tstg -65 to 125 Operating temperature range Topr -40 to 85 Terminal voltage - -0.3 to Vcc+1.0 V Memory cell characteristics (Ta=25C, V =1.7V to 5.5V) CC Limits Parameter Unit Min Typ. Max *1 Number of data rewrite times 1,000,000 - - Times *1 Data hold years 40 - - Years Shipment data all address FFh *1 Not 100% TESTED Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www .rohm.com TSZ02201-0R2R0G100480-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/24 TSZ2211114001 4.SEP.2012 Rev.001DatasheetDatasheet BU9847GUL-W (4Kbit) Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage V 1.7 to 5.5 CC V Input voltage Vin 0 to V CC Electrical characteristics (Unless otherwise specified, Ta=-40 to +85C, Vcc=1.7V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. HIGH input voltage1 V 0.7V - V +1.0 V 2.5VV 5.5V IH1 CC CC CC LOW Input voltage1 V -0.3 - 0.3V V 2.5VV 5.5V IL1 CC CC HIGH input voltage2 V 0.8V - V +1.0 V 1.8VV <2.5V IH2 CC CC CC LOW input voltage2 V -0.3 - 0.2V V 1.8VV <2.5V IL2 CC CC HIGH input voltage3 V 0.9V - V +1.0 V 1.7VV <1.8V IH3 CC CC CC LOW input voltage3 V -0.3 - 0.1V V 1.7VV <1.8V IL3 CC CC LOW output voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V, (SDA) OL1 OL CC LOW output voltage2 V - - 0.2 V I =0.7mA, 1.7VV 2.5V, (SDA) OL2 OL CC Input leak current I -1 - 1 AV =0V to V LI IN CC Output leak current I -1 - 1 AV =0V to V (SDA) LO OUT CC V =5.5V, fSCL =400kHz, tWR=5ms, CC I - - 2.0 mA CC1 Current consumption Byte write, Page write at action V =5.5V, fSCL =400kHz CC I - - 0.5 mA CC2 Random read, Current read, sequential read V =5.5V, SDASCL=V , CC CC Standby current I - - 2.0 A SB A2=GND, WP=GND Action timing characteristics (Unless otherwise specified, Ta=-40 to +85CV =1.7V to 5.5V) CC FAST-MODE 1.7VV 5.5V CC Parameter Symbol Unit Min. Typ. Max. SCL frequency fSCL - - 400 kHz Data clock HIGH time tHIGH 0.6 - - s Data clock LOW time tLOW 1.2 - - s SDA, SCL rise time *1 tR - - 0.3 s SDA< SCL fall time *1 tF - - 0.3 s Start condition hold time tHD:STA 0.6 - - s Start condition setup time tSU:STA 0.6 - - s Input data hold time tHD:DAT 0 - - ns Input data setup time tSU:DAT 100 - - ns Output data delay time tPD 0.1 - 0.9 s Output data hold time tDH 0.1 - - s Stop condition setup time tSU:STO 0.6 - - s Bus release time before transfer start tBUF 1.2 - - s Internal write cycle time tWR - - 5 ms Noise removal valid period (SDA, SCL terminal) tI - - 0.1 s WP hold time tHD:WP 0 - - ns WP setup time tSU:WP 0.1 - - s WP valid time tHIGH:WP 1.0 - - s *1 Not 100% tested. www.rohm.com TSZ02201-0R2R0G100480-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/24 TSZ2211115001 4.SEP.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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