Product Information

BU9883FV-WE2

BU9883FV-WE2 electronic component of ROHM

Datasheet
ROHM Semiconductor EEPROM I2C 6K BIT 256X8X3 3.3V5V 16PIN

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

31: USD 1.248 ea
Line Total: USD 38.69

4071 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 31  Multiples: 1
Pack Size: 1
Availability Price Quantity
2808 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 1.5295
10 : USD 1.403
100 : USD 1.265
500 : USD 1.2535
1000 : USD 1.196
5000 : USD 1.0281
10000 : USD 1.0281
25000 : USD 1.0281

2361 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 65
Multiples : 1
65 : USD 1.532
100 : USD 1.482
250 : USD 1.4523

130 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 65
Multiples : 1
65 : USD 1.2119

2425 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.0664

4071 - WHS 5


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 31
Multiples : 1
31 : USD 1.248
50 : USD 1.1288
100 : USD 0.9177
200 : USD 0.8625
500 : USD 0.8596
1000 : USD 0.7632
2000 : USD 0.7389

     
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*1 Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BU9883FV-W General Description BU9883FV-W is for DDC 3 ports, 2K x 8 bit array 3 BANK EEPROM. Features Package W(Typ.) x D(Typ.) x H(Max.) There are 3 BANKs, 1 BANK compose of 256 word address x 8 bit EEPROM There are 3 DDC interface channels, and each channel can access each BANK independently from other ports. 2K bit X 3 BANK memory bits can be accessed from write port (Port0). Operate voltage (3.0V to 5.5V) Built in diode for power supply from HDMI ports and system. Automatic erase 8 byte page write mode Low power consumption At write action ( 5.0V ) : 1.2mA (Typ.) At read action (5.0V) : 0.2mA(Typ.) 1port action SSOP-B16 At Standby action ( 5.0V ) : 50A(Typ.) 5.00mm x 6.40mm x 1.35mm DATA security Write Protect pin can switch write port Inhibit to WRITE at low VCC Endurance : 1,000,000 erase/write cycles Data retention 40 years Filtered inputs in all SCLSDA for noise suppression Shipment data all address FFh Typical Application Circuit HDMI Sink 0.1uF PWR HDMI1 PWR SYS Vcc1 Vcc0 47K 47K DDC SCL1 SCL1 Controller 0.1uF SDA1 DDC SDA1 WPB WPB OUT 0.1uF ROHM 2 Vcc OUT I C SCL PWR HDMI2 Vcc2 BU9883FV-W 2 I C SDA 0.1uF 47K 47K DDC SCL2 SCL2 SDA2 DDC SDA2 0.1uF SCL0 PWR HDMI3 Vcc3 SDA0 47K 47K DDC SCL3 SCL3 GND SDA3 DDC SDA3 HDMI Receiver SDA3 SCL3 SCL SINK DDC SCL SDA2 HDMI SCL2 Switch SDA1 SDA SINK DDC SDA SCL1 Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100420-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/26 TSZ2211114001 17.Aug.2015 Rev.002 BU9883FV-W Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remarks Supply Voltage VCC -0.3 to 6.5 V Degradation is done at 3.0mW/ for operation above 25 Power Dissipation Pd 0.4 W Storage Temperature Tstg -65 to 125 Operating Temperature Topr -40 to 85 The Max value of terminal voltage is not over 6.5V Terminal Voltage - -0.3 to VCC0.3 V Memory cell characteristics (Ta=25, VCC0 to 3 = 3.0V to 5.5V) Specification Parameter Unit Min. Typ. Max. *1 Write/Erase Cycle 1,000,000 - - Cycles *1 Data Retention 40 - - Years *1:Not 100 TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage V 3.0 to 5.5 CC V Input Voltage VIN 0 to V 0 to 3 CC Input/output capacity (Ta=25, Frequency=5MHz) Parameter Symbol Min. Typ. Max. Unit *1 SDA pins (SDA0,1,2,3) CIN - 7 - pF *1 SCL pins (SCL0,1,2,3) CIN2 - 7 - pF *1:Not 100 TESTED Electrical characteristics -DC operating (Unless otherwise specified, Ta=-40 to 85, VCC0 to 3 = 3.0V to 5.5V) Specification Parameter Symbol Unit Test condition Min. Typ. Max. Input Voltage0 VIH0 0.7xV 0 - V 0+0.5 V 3.0V 05.5V(SCL0, SDA0) CC CC CC Input Voltage0 VIL0 -0.3 - 0.3xV 0 V 3.0V 05.5V(SCL0, SDA0) CC CC Input Voltage1 VIH1 0.7xV 1 - V 1+0.5 V 3.0V 15.5V(SCL1, SDA1) CC CC CC Input Voltage1 VIL1 -0.3 - 0.3xV 1 V 3.0V 15.5V(SCL1, SDA1) CC CC Input Voltage2 VIH2 0.7xV 2 - V 2+0.5 V 3.0V 25.5V(SCL2, SDA2) CC CC CC Input Voltage2 VIL2 -0.3 - 0.3xV 2 V 3.0V 25.5V(SCL2, SDA2) CC CC Input Voltage3 VIH3 0.7xV 3 - V 3+0.5 V 3.0V 35.5V(SCL3, SDA3) CC CC CC Input Voltage3 VIL3 -0.3 - 0.3xV 3 V 3.0V 35.5V(SCL3, SDA3) CC CC Output Voltage0 VOL0 - - 0.4 V IOL=3.0mA , 3.0VV 05.5V(SDA0) CC Output Voltage1 VOL1 - - 0.4 V IOL=3.0mA , 3.0VV 15.5V(SDA1) CC Output Voltage2 VOL2 - - 0.4 V IOL=3.0mA , 3.0VV 25.5V(SDA2) CC Output Voltage3 VOL3 - - 0.4 V IOL=3.0mA , 3.0VV 35.5V(SDA3) CC WP Input Voltage VIH4 0.7xV 0 - V 0+0.3 V 3.0V 05.5V(WPB) CC CC CC WP Input Voltage VIL4 -0.3 - 0.3xV V 3.0V 05.5V(WPB) CC CC Input Leakage Current0 ILI0 -1 - 1 A VIN=0 to 5.5V(SCL0 to 3) Input Leakage Current1 ILI1 55 110 230 A WPB=5.5V , V =5.5V CC Output Leakage Current0 ILO0 -1 - 1 A VOUT=0 to 5.5(SDA0 to 3) V 0=5.5V, fSCL=400kHz tWR=5ms CC ICC1 - - 2.0 mA Byte Write, Page Write Operating Current VCC0 to 3=5.5V, fSCL=400kHz ICC2 - - 1.0 mA Random Read, Current Read,Sequential Read, (each port operation) VCC0=5.5V, SDA0 to 3=SCL0 to 3=5.5V, Standby Current ISB0 - - 100 A WPB=GND V 1=5.5V, SDA0 to 3=SCL0 to 3=5.5V, CC Standby Current ISB1 - - 100 A WPB=GND V 2=5.5V, SDA0 to 3=SCL0 to 3=5.5V, CC Standby Current ISB2 - - 100 A WPB=GND VCC3=5.5V, SDA0 to 3=SCL0 to 3=5.5V, Standby Current ISB3 - - 100 A WPB=GND www.rohm.com TSZ02201-0R2R0G100420-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/26 TSZ2211115001 17.Aug.2015 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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