BU9883FV-WE2 ROHM

BU9883FV-WE2 electronic component of ROHM
BU9883FV-WE2 ROHM
BU9883FV-WE2 EEPROM
BU9883FV-WE2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BU9883FV-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BU9883FV-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. BU9883FV-WE2
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM I2C 6K BIT 256X8X3 3.3V5V 16PIN
Datasheet: BU9883FV-WE2 Datasheet (PDF)
Price (USD)
1: USD 1.5625 ea
Line Total: USD 1.56 
Availability : 3016
  
Ship by Tue. 30 Sep to Thu. 02 Oct
QtyUnit Price
1$ 1.5625
10$ 1.404
25$ 1.288
100$ 1.21
250$ 1.177
500$ 1.122
1000$ 1.0967
2500$ 1.0868

Availability 3016
Ship by Tue. 30 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5625
10$ 1.404
25$ 1.288
100$ 1.21
250$ 1.177
500$ 1.122
1000$ 1.0967
2500$ 1.0868


Availability 4071
Ship by Thu. 02 Oct to Wed. 08 Oct
MOQ : 150
Multiples : 1
QtyUnit Price
150$ 1.742

   
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We are delighted to provide the BU9883FV-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BU9883FV-WE2 and other electronic components in the EEPROM category and beyond.

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*1 Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BU9883FV-W General Description BU9883FV-W is for DDC 3 ports, 2K x 8 bit array 3 BANK EEPROM. Features Package W(Typ.) x D(Typ.) x H(Max.) There are 3 BANKs, 1 BANK compose of 256 word address x 8 bit EEPROM There are 3 DDC interface channels, and each channel can access each BANK independently from other ports. 2K bit X 3 BANK memory bits can be accessed from write port (Port0). Operate voltage (3.0V to 5.5V) Built in diode for power supply from HDMI ports and system. Automatic erase 8 byte page write mode Low power consumption At write action ( 5.0V ) : 1.2mA (Typ.) At read action (5.0V) : 0.2mA(Typ.) 1port action SSOP-B16 At Standby action ( 5.0V ) : 50A(Typ.) 5.00mm x 6.40mm x 1.35mm DATA security Write Protect pin can switch write port Inhibit to WRITE at low VCC Endurance : 1,000,000 erase/write cycles Data retention 40 years Filtered inputs in all SCLSDA for noise suppression Shipment data all address FFh Typical Application Circuit HDMI Sink 0.1uF PWR HDMI1 PWR SYS Vcc1 Vcc0 47K 47K DDC SCL1 SCL1 Controller 0.1uF SDA1 DDC SDA1 WPB WPB OUT 0.1uF ROHM 2 Vcc OUT I C SCL PWR HDMI2 Vcc2 BU9883FV-W 2 I C SDA 0.1uF 47K 47K DDC SCL2 SCL2 SDA2 DDC SDA2 0.1uF SCL0 PWR HDMI3 Vcc3 SDA0 47K 47K DDC SCL3 SCL3 GND SDA3 DDC SDA3 HDMI Receiver SDA3 SCL3 SCL SINK DDC SCL SDA2 HDMI SCL2 Switch SDA1 SDA SINK DDC SDA SCL1 Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100420-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/26 TSZ2211114001 17.Aug.2015 Rev.002 BU9883FV-W Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remarks Supply Voltage VCC -0.3 to 6.5 V Degradation is done at 3.0mW/ for operation above 25 Power Dissipation Pd 0.4 W Storage Temperature Tstg -65 to 125 Operating Temperature Topr -40 to 85 The Max value of terminal voltage is not over 6.5V Terminal Voltage - -0.3 to VCC0.3 V Memory cell characteristics (Ta=25, VCC0 to 3 = 3.0V to 5.5V) Specification Parameter Unit Min. Typ. Max. *1 Write/Erase Cycle 1,000,000 - - Cycles *1 Data Retention 40 - - Years *1:Not 100 TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage V 3.0 to 5.5 CC V Input Voltage VIN 0 to V 0 to 3 CC Input/output capacity (Ta=25, Frequency=5MHz) Parameter Symbol Min. Typ. Max. Unit *1 SDA pins (SDA0,1,2,3) CIN - 7 - pF *1 SCL pins (SCL0,1,2,3) CIN2 - 7 - pF *1:Not 100 TESTED Electrical characteristics -DC operating (Unless otherwise specified, Ta=-40 to 85, VCC0 to 3 = 3.0V to 5.5V) Specification Parameter Symbol Unit Test condition Min. Typ. Max. Input Voltage0 VIH0 0.7xV 0 - V 0+0.5 V 3.0V 05.5V(SCL0, SDA0) CC CC CC Input Voltage0 VIL0 -0.3 - 0.3xV 0 V 3.0V 05.5V(SCL0, SDA0) CC CC Input Voltage1 VIH1 0.7xV 1 - V 1+0.5 V 3.0V 15.5V(SCL1, SDA1) CC CC CC Input Voltage1 VIL1 -0.3 - 0.3xV 1 V 3.0V 15.5V(SCL1, SDA1) CC CC Input Voltage2 VIH2 0.7xV 2 - V 2+0.5 V 3.0V 25.5V(SCL2, SDA2) CC CC CC Input Voltage2 VIL2 -0.3 - 0.3xV 2 V 3.0V 25.5V(SCL2, SDA2) CC CC Input Voltage3 VIH3 0.7xV 3 - V 3+0.5 V 3.0V 35.5V(SCL3, SDA3) CC CC CC Input Voltage3 VIL3 -0.3 - 0.3xV 3 V 3.0V 35.5V(SCL3, SDA3) CC CC Output Voltage0 VOL0 - - 0.4 V IOL=3.0mA , 3.0VV 05.5V(SDA0) CC Output Voltage1 VOL1 - - 0.4 V IOL=3.0mA , 3.0VV 15.5V(SDA1) CC Output Voltage2 VOL2 - - 0.4 V IOL=3.0mA , 3.0VV 25.5V(SDA2) CC Output Voltage3 VOL3 - - 0.4 V IOL=3.0mA , 3.0VV 35.5V(SDA3) CC WP Input Voltage VIH4 0.7xV 0 - V 0+0.3 V 3.0V 05.5V(WPB) CC CC CC WP Input Voltage VIL4 -0.3 - 0.3xV V 3.0V 05.5V(WPB) CC CC Input Leakage Current0 ILI0 -1 - 1 A VIN=0 to 5.5V(SCL0 to 3) Input Leakage Current1 ILI1 55 110 230 A WPB=5.5V , V =5.5V CC Output Leakage Current0 ILO0 -1 - 1 A VOUT=0 to 5.5(SDA0 to 3) V 0=5.5V, fSCL=400kHz tWR=5ms CC ICC1 - - 2.0 mA Byte Write, Page Write Operating Current VCC0 to 3=5.5V, fSCL=400kHz ICC2 - - 1.0 mA Random Read, Current Read,Sequential Read, (each port operation) VCC0=5.5V, SDA0 to 3=SCL0 to 3=5.5V, Standby Current ISB0 - - 100 A WPB=GND V 1=5.5V, SDA0 to 3=SCL0 to 3=5.5V, CC Standby Current ISB1 - - 100 A WPB=GND V 2=5.5V, SDA0 to 3=SCL0 to 3=5.5V, CC Standby Current ISB2 - - 100 A WPB=GND VCC3=5.5V, SDA0 to 3=SCL0 to 3=5.5V, Standby Current ISB3 - - 100 A WPB=GND www.rohm.com TSZ02201-0R2R0G100420-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/26 TSZ2211115001 17.Aug.2015 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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