X-On Electronics has gained recognition as a prominent supplier of DTA114ECAHZGT116 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTA114ECAHZGT116 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTA114ECAHZGT116 ROHM

DTA114ECAHZGT116 electronic component of ROHM
DTA114ECAHZGT116 ROHM
DTA114ECAHZGT116 Bipolar Transistors - Pre-Biased
DTA114ECAHZGT116  Semiconductors

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See Product Specifications
Part No. DTA114ECAHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP SOT-23 10kO Input Resist
Datasheet: DTA114ECAHZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2271 ea
Line Total: USD 1.14 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 5
Multiples : 1
5 : USD 0.2271
10 : USD 0.1327
100 : USD 0.0598
500 : USD 0.05
1000 : USD 0.0393
5000 : USD 0.0328

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2107
10 : USD 0.195
100 : USD 0.1021
500 : USD 0.0606
1000 : USD 0.0424
3000 : USD 0.0339
9000 : USD 0.0303
24000 : USD 0.0256
45000 : USD 0.0244

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 25
Multiples : 25
25 : USD 0.0434
100 : USD 0.0407
500 : USD 0.0367
525 : USD 0.0312
1425 : USD 0.0285

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Maximum Operating Temperature
Packaging
Qualification
Output Voltage
Brand
Pd - Power Dissipation
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Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the DTA114ECAHZGT116 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTA114ECAHZGT116 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTA114ECA HZG PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-23 V -50V CC I -100mA C(MAX.) R 10k 1 R 10k (SST3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary NPN Types: DTC114ECA HZG llApplication INVERTER,INTERFACE,DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTA114ECA HZG 2924 T116 180 8 3000 14 (SST3) www.rohm.com 20190906 - Rev. 003 1/5 2016 ROHM Co., Ltd. All rights reserved.DTA114ECA HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage -50 V CC Input voltage V -40 to 10 V IN Output current I -50 mA O *1 Collector current I -100 mA C(MAX) *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3.0 - - I(on) O O Output voltage V I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I Input current I V = -5V - - -880 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20190906 - Rev. 003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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