DTC124X series Datasheet NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) llOutline Parameter Value SOT-723 SOT-416FL V 50V CC I 100mA C(MAX.) R 22k 1 DTC124XM DTC124XEB R (VMT3) (EMT3F) 47k 2 SOT-416 SOT-323FL llFeatures 1) Built-In Biasing Resistors, R = 22k, R = 47k 1 2 DTC124XE DTC124XUB 2) Built-in bias resistors enable the configuration of (EMT3) (UMT3F) an inverter circuit without connecting external SOT-323 SOT-346 input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA124X series llApplication INVERTER, INTERFACE, DRIVER DTC124XUA DTC124XKA (UMT3) (SMT3) llInner circuit DTC124XM/ DTC124XEB/ DTC124XUB DTC124XE/ DTC124XUA/ DTC124XKA llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) DTC124XM SOT-723 1212 T2L 180 8 8000 45 DTC124XEB SOT-416FL 1616 TL 180 8 3000 45 DTC124XE SOT-416 1616 TL 180 8 3000 45 DTC124XUB SOT-323FL 2021 TL 180 8 3000 45 DTC124XUA SOT-323 2021 T106 180 8 3000 45 DTC124XKA SOT-346 2928 T146 180 8 3000 45 www.rohm.com 1/10 20170609 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. DTC124X series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Supply voltage V 50 V CC V Input voltage -10 to 40 V IN I Output current 50 mA O *1 I Collector current 100 mA C(MAX) DTC124XM 150 DTC124XEB 150 DTC124XE 150 *2 Power dissipation P mW D DTC124XUB 200 DTC124XUA 200 DTC124XKA 200 T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.4 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 2.5 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 360 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 68 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 1.7 2.1 2.6 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/10 2018 ROHM Co., Ltd. All rights reserved. 20170609 - Rev.001