QH8K51 Datasheet 100V Nch+Nch Small Signal MOSFET llOutline V 100V DSS R (Max.) 325m DS(on) TSMT8 I 2A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TR Marking K51 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 100 V DSS Continuous drain current I 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 QH8K51 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 113 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 2A - 240 325 GS D Static drain - source *4 R V = 4.5V, I = 2A - 250 340 m DS(on) GS D on - state resistance V = 4.0V, I = 2A - 260 355 GS D Gate resistance R f = 1MHz, open drain - 8.5 - G Forward Transfer *4 Y V = 10V, I = 2A 1.9 - - S fs DS D Admittance www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003