QS5U13TR ROHM

QS5U13 Datasheet 2.5V Drive Nch+SBD MOSFET llOutline SOT-25T V 30V DSS R (Max.) 100m DS(on) TSMT5 I 2.0A D P 1.25W D llInner circuit llFeatures 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low V schottky barrier diode. F 5) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Load switch, DC/ DC conversion Quantity (pcs) 3000 Taping code TR Marking U13 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS V Gate - Source voltage 12 V GSS Continuous drain current I 2.0 A D *1 I Pulsed drain current 8.0 A DP Continuous source current (body diode) I 0.8 A S *1 I Pulsed source current (body diode) 3.2 A SP *3 P Power dissipation 0.9 W/element D Junction temperature T 150 j www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.002 QS5U13 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 30 V RM V Reverse voltage 20 V R I Forward current 0.5 A F *2 I Forward current surge peak 2.0 A FSM *3 P Power dissipation 0.7 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.25 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current V V = 10V, I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS D V = 4.5V, I = 2.0A - 71 100 GS D Static drain - source *4 R V = 4.0V, I = 2.0A - 76 107 m DS(on) GS D on - state resistance V = 2.5V, I = 2.0A - 110 154 GS D Forward Transfer *4 Y V = 10V, I = 2.0A 1.5 - - S fs DS D Admittance www.rohm.com 2/10 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.