QS8M31TR ROHM

QS8M31 Datasheet 60V Nch+Pch Small Signal MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 60V -60V DSS TSMT8 R (Max.) 112m 210m DS(on) I 3A 2A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TR Marking M31 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 60 -60 V DSS I Continuous drain current 3 2 A D *1 I Pulsed drain current 6 4 A DP V Gate - Source voltage 20 20 V GSS *2 P 1.5 D Power dissipation total W *3 P 1.1 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. QS8M31 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 thJA Thermal resistance, junction - ambient total /W *3 R - - 113 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 60 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -60 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 63.7 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -60.0 - Tr1 V = 60V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -60V, V = 0V - - -1 DS GS Tr1 V = 20V, V = 0V - - 10 GS DS Gate - Source I A GSS leakage current Tr2 V = 20V, V = 0V - - 10 GS DS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -3.0 DS D V I = 1mA, referenced to 25 Tr1 - -2.8 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.0 - j D V = 10V, I = 3A - 80 112 GS D Tr1 V = 4.5V, I = 3A - 93 130 GS D V = 4.0V, I = 3A - 98 137 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -2A - 150 210 GS D Tr2 V = -4.5V, I = -2A - 180 252 GS D V = -4.0V, I = -2A - 190 266 GS D Tr1 - 9.8 - R Gate resistance f=1MHz, open drain G Tr2 - 8.7 - Tr1 V = 10V, I = 3A 2.5 - - DS D Forward Transfer *4 Y S fs Admittance V = -10V, I = -2A Tr2 2.5 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/19 20190527 - Rev.003