QST5TR ROHM

QST5TR electronic component of ROHM
QST5TR ROHM
QST5TR Bipolar Transistors - BJT
QST5TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QST5TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QST5TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. QST5TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT BIPOLAR PNP Vce 30V 2A
Datasheet: QST5TR Datasheet (PDF)
Price (USD)
997: USD 0.2609 ea
Line Total: USD 260.12 
Availability : 0
  
QtyUnit Price
997$ 0.2609

Availability 2910
Ship by Wed. 06 Aug to Tue. 12 Aug
MOQ : 997
Multiples : 1
QtyUnit Price
997$ 0.2609

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QST5TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QST5TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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QST5 Transistors Low frequency amplifier QST5 z External dimensions (Unit : mm) z Application Low frequency amplifier 2.8 1.6 Driver z Features 1pin mark 1) A collector current is large. 2) V : max. 370mV CE(sat) Each lead has same dimensions At lc= 1.5A / l = 75mA B ROHM : TSMT6 Abbreviated symbol : T05 z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit (6) (5) (4) Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 500 mW Power dissipation PC 3 1.25 W (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms 2 Each terminal mounted on a recommended t 3 Mounted on a 25mm25mm 0.8mm ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC= 10A Collector-emitter breakdown voltage BVCEO 30 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff curent ICBO 100 nA VCB= 30V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 180 370 mV IC= 1.5A, IB= 75mA DC current gain hFE 270 680 VCE= 2V, IC= 200mA Transition frequency fT 280 MHz VCE= 2V, IE=200mA, f=100MHz Collector output capacitance Cob 20 pF VCB= 10V, IE=0A, f=1MHz Rev.B 1/2 0.4 0.16 (6) (5) (4) (1) (2) (3) 2.9 0.85QST5 Transistors z Packaging specifications package Taping Type Code TR Basic ordering unit(pieces) 3000 QST5 z Electrical characteristic curves 1000 10 10 VCE=2V IC/IB=20/1 Ta=25 C Pulsed Pulsed Pulsed Ta=100 C Ta=25 C 1 Ta=40 C 100 1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.1 Ta=40 C Ta=25 C Ta=100 C 10 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig.3 Base-emitter saturation voltage Fig.1 DV current gain vs. collector current vs. collector current vs. collector current 10 1000 10000 VBE=2V Ta=25 C Ta=25 C VCE=2V Pulsed VCE=2V IC/IB=20/1 f=100MHz Pulsed 1000 Ta=100 C tstg Ta=25 C 1 Ta=40 C 100 100 tf tdon 0.1 10 tr 1 0.01 10 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter curent 1000 IC=0A f=1MHz Ta=25 C Cib 100 Cob 10 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VBE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 COLLECTOR CURRENT :IC (A) COLLECTOR CURRENT :IC (A) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) SWITCHINGTIME : (ns) BASE SATURATION VOLTAGE : VBE(sat) (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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