QST5TR ROHM

QST5 Transistors Low frequency amplifier QST5 z External dimensions (Unit : mm) z Application Low frequency amplifier 2.8 1.6 Driver z Features 1pin mark 1) A collector current is large. 2) V : max. 370mV CE(sat) Each lead has same dimensions At lc= 1.5A / l = 75mA B ROHM : TSMT6 Abbreviated symbol : T05 z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit (6) (5) (4) Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 500 mW Power dissipation PC 3 1.25 W (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms 2 Each terminal mounted on a recommended t 3 Mounted on a 25mm25mm 0.8mm ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC= 10A Collector-emitter breakdown voltage BVCEO 30 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff curent ICBO 100 nA VCB= 30V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 180 370 mV IC= 1.5A, IB= 75mA DC current gain hFE 270 680 VCE= 2V, IC= 200mA Transition frequency fT 280 MHz VCE= 2V, IE=200mA, f=100MHz Collector output capacitance Cob 20 pF VCB= 10V, IE=0A, f=1MHz Rev.B 1/2 0.4 0.16 (6) (5) (4) (1) (2) (3) 2.9 0.85QST5 Transistors z Packaging specifications package Taping Type Code TR Basic ordering unit(pieces) 3000 QST5 z Electrical characteristic curves 1000 10 10 VCE=2V IC/IB=20/1 Ta=25 C Pulsed Pulsed Pulsed Ta=100 C Ta=25 C 1 Ta=40 C 100 1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.1 Ta=40 C Ta=25 C Ta=100 C 10 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig.3 Base-emitter saturation voltage Fig.1 DV current gain vs. collector current vs. collector current vs. collector current 10 1000 10000 VBE=2V Ta=25 C Ta=25 C VCE=2V Pulsed VCE=2V IC/IB=20/1 f=100MHz Pulsed 1000 Ta=100 C tstg Ta=25 C 1 Ta=40 C 100 100 tf tdon 0.1 10 tr 1 0.01 10 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC(A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time characteristics vs. emitter curent 1000 IC=0A f=1MHz Ta=25 C Cib 100 Cob 10 1 0.001 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VBE (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 COLLECTOR CURRENT :IC (A) COLLECTOR CURRENT :IC (A) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) SWITCHINGTIME : (ns) BASE SATURATION VOLTAGE : VBE(sat) (V)